Transistoren – FETs, MOSFETs – Einzeltransistoren

Foto: Hersteller-Teilenummer Verfügbarkeit Preis Menge Datenblatt Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDC638APZ-SBMS001

FDC638APZ-SBMS001

LV FET / WBG

onsemi
2,880 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FDMC010N08LC

FDMC010N08LC

N-CHANNEL SHIELDED GATE POWERTRE

onsemi
2,942 -

RFQ

FDMC010N08LC

Datenblatt

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 80 V 11A (Ta), 50A (Tc) 4.5V, 10V 10.9mOhm @ 16A, 10V 3V @ 90µA 31 nC @ 10 V ±20V 2135 pF @ 40 V - 2.3W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NVGS4111PT1G

NVGS4111PT1G

NVGS4111 - SINGLE P-CHANNEL POWE

onsemi
3,352 -

RFQ

NVGS4111PT1G

Datenblatt

Bulk - Active P-Channel MOSFET (Metal Oxide) 30 V 3.7A (Ta) 4.5V, 10V 60mOhm @ 3.7A, 10V 3V @ 250µA 32 nC @ 10 V ±20V 750 pF @ 15 V - 630mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDP038AN06A0

FDP038AN06A0

POWER FIELD-EFFECT TRANSISTOR, 1

onsemi
3,603 -

RFQ

FDP038AN06A0

Datenblatt

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Ta), 80A (Tc) 6V, 10V 3.8mOhm @ 80A, 10V 4V @ 250µA 124 nC @ 10 V ±20V 6400 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Through Hole
FCP11N60F

FCP11N60F

POWER FIELD-EFFECT TRANSISTOR, 1

onsemi
2,826 -

RFQ

FCP11N60F

Datenblatt

Bulk SuperFET™ Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 380mOhm @ 5.5A, 10V 5V @ 250µA 52 nC @ 10 V ±30V 1490 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
NDT456P

NDT456P

P-CHANNEL ENHANCEMENT MODE FIELD

onsemi
3,235 -

RFQ

NDT456P

Datenblatt

Bulk - Active P-Channel MOSFET (Metal Oxide) 30 V 7.5A (Ta) 4.5V, 10V 30mOhm @ 7.5A, 10V 3V @ 250µA 67 nC @ 10 V ±20V 1440 pF @ 15 V - 3W (Ta) -65°C ~ 150°C (TJ) Surface Mount
NVD3055L104T4G-VF01

NVD3055L104T4G-VF01

NVD3055L104 - NFET DPAK 60V SPCL

onsemi
3,695 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FDP039N08B-F102

FDP039N08B-F102

POWER FIELD-EFFECT TRANSISTOR, 1

onsemi
2,782 -

RFQ

FDP039N08B-F102

Datenblatt

Bulk,Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 10V 3.9mOhm @ 100A, 10V 4.5V @ 250µA 133 nC @ 10 V ±20V 9450 pF @ 40 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDS8876-F40

FDS8876-F40

30V N-CHANNEL POWERTRENCH MOSFET

onsemi
3,589 -

RFQ

Tape & Reel (TR) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 12.5A (Ta) 4.5V, 10V 8.2mOhm @ 12.5A, 10V 2.5V @ 250µA 36 nC @ 10 V ±20V 1650 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
HUF75321P3

HUF75321P3

MOSFET N-CH 55V 35A TO220-3

onsemi
760 -

RFQ

HUF75321P3

Datenblatt

Tube UltraFET™ Active N-Channel MOSFET (Metal Oxide) 55 V 35A (Tc) 10V 34mOhm @ 35A, 10V 4V @ 250µA 44 nC @ 20 V ±20V 680 pF @ 25 V - 93W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQP2N90

FQP2N90

MOSFET N-CH 900V 2.2A TO220-3

onsemi
360 -

RFQ

FQP2N90

Datenblatt

Tube QFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 900 V 2.2A (Tc) 10V 7.2Ohm @ 1.1A, 10V 5V @ 250µA 15 nC @ 10 V ±30V 500 pF @ 25 V - 85W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF5N60C

FQPF5N60C

MOSFET N-CH 600V 4.5A TO220F

onsemi
240 -

RFQ

FQPF5N60C

Datenblatt

Tube QFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 600 V 4.5A (Tc) 10V 2.5Ohm @ 2.25A, 10V 4V @ 250µA 19 nC @ 10 V ±30V 670 pF @ 25 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDP8N50NZ

FDP8N50NZ

MOSFET N-CH 500V 8A TO220-3

onsemi
980 -

RFQ

FDP8N50NZ

Datenblatt

Tube UniFET™ Last Time Buy N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4A, 10V 5V @ 250µA 18 nC @ 10 V ±25V 735 pF @ 25 V - 130W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDPF390N15A

FDPF390N15A

MOSFET N-CH 150V 15A TO220F

onsemi
500 -

RFQ

FDPF390N15A

Datenblatt

Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 150 V 15A (Tc) 10V 40mOhm @ 15A, 10V 4V @ 250µA 18.6 nC @ 10 V ±20V 1285 pF @ 75 V - 22W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQPF19N20C

FQPF19N20C

MOSFET N-CH 200V 19A TO220F

onsemi
808 -

RFQ

FQPF19N20C

Datenblatt

Tube QFET® Active N-Channel MOSFET (Metal Oxide) 200 V 19A (Tc) 10V 170mOhm @ 9.5A, 10V 4V @ 250µA 53 nC @ 10 V ±30V 1080 pF @ 25 V - 43W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF3N80C

FQPF3N80C

MOSFET N-CH 800V 3A TO220F

onsemi
790 -

RFQ

FQPF3N80C

Datenblatt

Tube QFET® Active N-Channel MOSFET (Metal Oxide) 800 V 3A (Tc) 10V 4.8Ohm @ 1.5A, 10V 5V @ 250µA 16.5 nC @ 10 V ±30V 705 pF @ 25 V - 39W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCP600N60Z

FCP600N60Z

MOSFET N-CH 600V 7.4A TO220-3

onsemi
372 -

RFQ

FCP600N60Z

Datenblatt

Tube SuperFET® II Active N-Channel MOSFET (Metal Oxide) 600 V 7.4A (Tc) 10V 600mOhm @ 3.7A, 10V 3.5V @ 250µA 26 nC @ 10 V ±20V 1120 pF @ 25 V - 89W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF9P25

FQPF9P25

MOSFET P-CH 250V 6A TO220F-3

onsemi
320 -

RFQ

FQPF9P25

Datenblatt

Tube QFET® Active P-Channel MOSFET (Metal Oxide) 250 V 6A (Tc) 10V 620mOhm @ 3A, 10V 5V @ 250µA 38 nC @ 10 V ±30V 1180 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDPF12N50NZ

FDPF12N50NZ

MOSFET N-CH 500V 11.5A TO220F

onsemi
185 -

RFQ

FDPF12N50NZ

Datenblatt

Tube UniFET-II™ Last Time Buy N-Channel MOSFET (Metal Oxide) 500 V 11.5A (Tc) 10V 520mOhm @ 5.75A, 10V 5V @ 250µA 30 nC @ 10 V ±25V 1235 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTP6412ANG

NTP6412ANG

MOSFET N-CH 100V 58A TO220AB

onsemi
2,577 -

RFQ

NTP6412ANG

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 58A (Tc) 10V 18.2mOhm @ 58A, 10V 4V @ 250µA 100 nC @ 10 V ±20V 3500 pF @ 25 V - 167W (Tc) -55°C ~ 175°C (TJ) Through Hole
Total 7100 Record«Prev1... 342343344345346347348349...355Next»
1500+
1500+ Täglicher Durchschnitts-RFQ
20,000.000
20,000.000 Standardprodukteinheit
1800+
1800+ Weltweite Hersteller
15,000+
15,000+ Lagerbestand
Fudong Communication (shenzhen) Group Co., Ltd.

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