Transistoren – FETs, MOSFETs – Einzeltransistoren

Foto: Hersteller-Teilenummer Verfügbarkeit Preis Menge Datenblatt Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
NTMFS5C645NLT1G

NTMFS5C645NLT1G

SINGLE N-CHANNEL POWER MOSFET 60

onsemi
3,363 -

RFQ

NTMFS5C645NLT1G

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 22A (Ta), 100A (Tc) 4.5V, 10V 4mOhm @ 50A, 10V 2V @ 250µA 34 nC @ 10 V ±20V 2200 pF @ 50 V - 3.7W (Ta), 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NDUL03N150CG

NDUL03N150CG

N-CHANNEL POWER MOSFET, 1500V, 2

onsemi
3,255 -

RFQ

NDUL03N150CG

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 1500 V 2.5A (Ta) 10V 10.5Ohm @ 1.25A, 10V - 34 nC @ 10 V ±30V 650 pF @ 30 V - 3W (Ta), 50W (Tc) 150°C (TJ) Through Hole
NVB110N65S3F

NVB110N65S3F

SINGLE N-CHANNEL POWER MOSFET SU

onsemi
2,269 -

RFQ

NVB110N65S3F

Datenblatt

Bulk FRFET®, SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 10V 110mOhm @ 15A, 10V 5V @ 3mA 58 nC @ 10 V ±30V 2560 pF @ 400 V - 240W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NTTFS6H880NTAG

NTTFS6H880NTAG

T8 80V U8FL

onsemi
2,172 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 80 V 6.3A (Ta), 21A (Tc) 6V, 10V 32mOhm @ 5A, 10V 4V @ 20µA 6.9 nC @ 10 V ±20V 370 pF @ 40 V - 3.1W (Ta), 31W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTMFS4C09NBT1G

NTMFS4C09NBT1G

NTMFS4C09 - NFET SO8FL 30V 52A 5

onsemi
2,221 -

RFQ

NTMFS4C09NBT1G

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V - - - - - - 1252 pF @ 15 V - 760mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDMS8558SDC

FDMS8558SDC

POWER FIELD-EFFECT TRANSISTOR, 3

onsemi
3,025 -

RFQ

FDMS8558SDC

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
PF5102

PF5102

PF5102 - N-CHANNEL LOW-FREQUENCY

onsemi
2,024 -

RFQ

PF5102

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
FDS8960C

FDS8960C

DUAL N & P-CHANNEL POWERTRENCH M

onsemi
3,521 -

RFQ

FDS8960C

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
FDD3672-F085

FDD3672-F085

FDD3672 - N-CHANNEL ULTRAFET TRE

onsemi
2,687 -

RFQ

FDD3672-F085

Datenblatt

Bulk Automotive, AEC-Q101, UltraFET™ Active N-Channel MOSFET (Metal Oxide) 100 V 44A (Tc) 6V, 10V 47mOhm @ 21A, 6V 4V @ 250µA 36 nC @ 10 V ±20V 1635 pF @ 25 V - 144W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDC2512

FDC2512

N-CHANNEL POWERTRENCH MOSFET 150

onsemi
3,825 -

RFQ

FDC2512

Datenblatt

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 150 V 1.4A (Ta) 6V, 10V 425mOhm @ 1.4A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 344 pF @ 75 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDN357N

FDN357N

FDN357N - SMALL SIGNAL FIELD-EFF

onsemi
2,352 -

RFQ

FDN357N

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 1.9A (Ta) 4.5V, 10V 60mOhm @ 2.2A, 10V 2V @ 250µA 5.9 nC @ 5 V ±20V 235 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDMC0310AS-F127

FDMC0310AS-F127

N-CHANNEL POWERTRENCH SYNCFET 30

onsemi
3,307 -

RFQ

FDMC0310AS-F127

Datenblatt

Bulk PowerTrench®, SyncFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 21A (Tc) - 4.4mOhm @ 19A, 10V 3V @ 1mA 52 nC @ 10 V - 3165 pF @ 15 V - - - Surface Mount
2N7002-F169

2N7002-F169

2N7002 - TRANSISTOR

onsemi
2,920 -

RFQ

2N7002-F169

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
MMBFJ201

MMBFJ201

N-CHANNEL GENERAL PURPOSE AMPLIF

onsemi
2,183 -

RFQ

MMBFJ201

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
NTD5406NT4G

NTD5406NT4G

NTD5406 - POWER MOSFET 40V 70A 1

onsemi
2,917 -

RFQ

NTD5406NT4G

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 40 V 12.2A (Ta), 70A (Tc) 5V, 10V 10mOhm @ 30A, 10V 3.5V @ 250µA 45 nC @ 10 V ±20V 2500 pF @ 32 V - 3W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDC654P

FDC654P

SMALL SIGNAL FIELD-EFFECT TRANSI

onsemi
2,285 -

RFQ

FDC654P

Datenblatt

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 30 V 3.6A (Ta) 4.5V, 10V 75mOhm @ 3.6A, 10V 3V @ 250µA 9 nC @ 10 V ±20V 298 pF @ 15 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDS86252

FDS86252

FDS86252 - N-CHANNEL POWER TRENC

onsemi
2,651 -

RFQ

FDS86252

Datenblatt

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 150 V 4.5A (Ta) 6V, 10V 55mOhm @ 4.5A, 10V 4V @ 250µA 15 nC @ 10 V ±20V 955 pF @ 75 V - 2.5W (Ta), 5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDS6892A

FDS6892A

POWER FIELD-EFFECT TRANSISTOR, 7

onsemi
3,381 -

RFQ

FDS6892A

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
FDD6680AS

FDD6680AS

POWER FIELD-EFFECT TRANSISTOR, 5

onsemi
2,396 -

RFQ

FDD6680AS

Datenblatt

Bulk PowerTrench®, SyncFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 55A (Ta) 4.5V, 10V 10.5mOhm @ 12.5A, 10V 3V @ 1mA 29 nC @ 10 V ±20V 1200 pF @ 15 V - 60W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQP85N06

FQP85N06

MOSFET N-CH 60V 85A TO220-3

onsemi
284 -

RFQ

FQP85N06

Datenblatt

Tube QFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 60 V 85A (Tc) 10V 10mOhm @ 42.5A, 10V 4V @ 250µA 112 nC @ 10 V ±25V 4120 pF @ 25 V - 160W (Tc) -55°C ~ 175°C (TJ) Through Hole
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1500+
1500+ Täglicher Durchschnitts-RFQ
20,000.000
20,000.000 Standardprodukteinheit
1800+
1800+ Weltweite Hersteller
15,000+
15,000+ Lagerbestand
Fudong Communication (shenzhen) Group Co., Ltd.

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