Goford Semiconductor G01N20LE

Teilenummer
G01N20LE
Hersteller
Goford Semiconductor
Kategorie:
Transistoren – FETs, MOSFETs – Einzeltransistoren
Verpackung
SOT-23-3
Datenblatt
Fudong Communication (shenzhen) Group Co., Ltd.G01N20LE.pdf
Beschreibung
N200V,RD(MAX)<850M@10V,RD(MAX)<9
Menge

Stückpreis$0

Gesamtpreis$0

Zahlung
payment
Versand
payment

Product details

1. How to order G01N20LE on Fudong Communication (Shenzhen) Group Co., Ltd.?

Currently, Fudong Communication (Shenzhen) Group Co., Ltd. only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

2. How does Fudong Communication (Shenzhen) Group Co., Ltd. guarantee that G01N20LE is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the G01N20LE. All suppliers must pass our qualification reviews before they can publish their products including G01N20LE on Fudong Communication (Shenzhen) Group Co., Ltd.; we pay more attention to the channels and quality of G01N20LE products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the G01N20LE price and inventory displayed accurate?

The price and inventory of G01N20LE fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

Wire Transfer, PayPal, Alipay, Wechat, Credit Card, Western Union, MoneyGram, and Escrow are all acceptable.

Warm Tips: Some orders in certain payment forms may require handling fee.

5. How is the shipping arranged?

Customers can choose industry-leading freight companies, including DHL, UPS, FedEx, TNT, and Registered Mail. Shipping insurance is also available.

Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of G01N20LE?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the G01N20LE we delivered, we will accept the replacement or return of the G01N20LE only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of G01N20LE.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as G01N20LE pin diagram, G01N20LE datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Bild 03N06 5P40 G30N02T GT100N12M GC11N65M
Teilenummer 03N06 5P40 G30N02T GT100N12M GC11N65M
Hersteller Goford Semiconductor Goford Semiconductor Goford Semiconductor Goford Semiconductor Goford Semiconductor
Packaging Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT)
Series - - - - -
ProductStatus Active Active Active Active Active
FETType N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 200 V 200 V 200 V 200 V 200 V
Current-ContinuousDrain(Id)@25°C 1.7A (Tc) 1.7A (Tc) 1.7A (Tc) 1.7A (Tc) 1.7A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
RdsOn(Max)@IdVgs 850mOhm @ 1.7A, 10V 850mOhm @ 1.7A, 10V 850mOhm @ 1.7A, 10V 850mOhm @ 1.7A, 10V 850mOhm @ 1.7A, 10V
Vgs(th)(Max)@Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 12 nC @ 10 V 12 nC @ 10 V 12 nC @ 10 V 12 nC @ 10 V 12 nC @ 10 V
Vgs(Max) ±20V ±20V ±20V ±20V ±20V
InputCapacitance(Ciss)(Max)@Vds 580 pF @ 25 V 580 pF @ 25 V 580 pF @ 25 V 580 pF @ 25 V 580 pF @ 25 V
FETFeature - - - - -
PowerDissipation(Max) 1.5W (Tc) 1.5W (Tc) 1.5W (Tc) 1.5W (Tc) 1.5W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
MountingType Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount

G01N20LE Relevante Informationen

Die folgenden Teile sind enthalten "G01N20LE" ISSI, Integrated Silicon Solutions Inc. G01N20LE.

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  • Beschreibung
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