Transistoren – FETs, MOSFETs – Einzeltransistoren

Foto: Hersteller-Teilenummer Verfügbarkeit Preis Menge Datenblatt Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
2SK4150TZ-E

2SK4150TZ-E

MOSFET N-CH 250V 400MA TO92

Renesas Electronics America Inc
2,117 -

RFQ

2SK4150TZ-E

Datenblatt

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 400mA (Ta) 2.5V, 4V 5.7Ohm @ 200mA, 4V - 3.7 nC @ 4 V ±10V 80 pF @ 25 V - 750mW (Ta) 150°C (TJ) Through Hole
2SK4151TZ-E

2SK4151TZ-E

MOSFET N-CH 150V 1A TO92

Renesas Electronics America Inc
2,567 -

RFQ

2SK4151TZ-E

Datenblatt

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 150 V 1A (Ta) 2.5V, 4V 1.95Ohm @ 500mA, 4V - 3.5 nC @ 4 V ±10V 98 pF @ 10 V - 750mW (Ta) 150°C (TJ) Through Hole
H5N2522LSTL-E

H5N2522LSTL-E

MOSFET N-CH 250V 20A 4LDPAK

Renesas Electronics America Inc
2,485 -

RFQ

H5N2522LSTL-E

Datenblatt

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 250 V 20A (Ta) 10V 180mOhm @ 10A, 10V - 47 nC @ 10 V ±30V 1300 pF @ 25 V - 75W (Tc) 150°C (TJ) Surface Mount
HS54095TZ-E

HS54095TZ-E

MOSFET N-CH 600V 200MA TO92-3

Renesas Electronics America Inc
2,723 -

RFQ

HS54095TZ-E

Datenblatt

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 200mA (Ta) 10V 16.5Ohm @ 100mA, 10V - 4.8 nC @ 10 V ±30V 66 pF @ 25 V - 750mW (Ta) 150°C (TJ) Through Hole
NP109N04PUG-E1-AY

NP109N04PUG-E1-AY

MOSFET N-CH 40V 110A TO263-3

Renesas Electronics America Inc
2,162 -

RFQ

NP109N04PUG-E1-AY

Datenblatt

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 40 V 110A (Tc) 10V 2.3mOhm @ 55A, 10V 4V @ 250µA 270 nC @ 10 V ±20V 15750 pF @ 25 V - 1.8W (Ta), 220W (Tc) 175°C (TJ) Surface Mount
NP110N055PUG-E1-AY

NP110N055PUG-E1-AY

MOSFET N-CH 55V 110A TO263

Renesas Electronics America Inc
2,641 -

RFQ

NP110N055PUG-E1-AY

Datenblatt

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 55 V 110A (Tc) 10V 2.4mOhm @ 55A, 10V 4V @ 250µA 380 nC @ 10 V ±20V 25700 pF @ 25 V - 1.8W (Ta), 288W (Tc) 175°C (TJ) Surface Mount
NP40N10PDF-E1-AY

NP40N10PDF-E1-AY

MOSFET N-CH 100V 40A TO263

Renesas Electronics America Inc
2,720 -

RFQ

NP40N10PDF-E1-AY

Datenblatt

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 40A (Tc) 4.5V, 10V 27mOhm @ 20A, 10V 2.5V @ 250µA 71 nC @ 10 V ±20V 3150 pF @ 25 V - 1.8W (Ta), 120W (Tc) 175°C (TJ) Surface Mount
NP40N10YDF-E1-AY

NP40N10YDF-E1-AY

MOSFET N-CH 100V 40A 8HSON

Renesas Electronics America Inc
3,676 -

RFQ

NP40N10YDF-E1-AY

Datenblatt

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 40A (Tc) 4.5V, 10V 25mOhm @ 20A, 10V 2.5V @ 250µA 71 nC @ 10 V ±20V 3150 pF @ 25 V - 1W (Ta), 120W (Tc) 175°C (TJ) Surface Mount
RJK0331DPB-01#J0

RJK0331DPB-01#J0

POWER FIELD-EFFECT TRANSISTOR

Renesas Electronics America Inc
3,935 -

RFQ

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 40A (Ta) - 3.4mOhm @ 20A, 10V - 22 nC @ 4.5 V - 3380 pF @ 10 V - 50W (Tc) 150°C (TJ) Surface Mount
RJK0332DPB-01#J0

RJK0332DPB-01#J0

SILICON N CHANNEL POWER SWITCHI

Renesas Electronics America Inc
2,577 -

RFQ

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 35A (Ta) 4.5V, 10V 4.7mOhm @ 17.5A, 10V 2.5V @ 1mA 14 nC @ 4.5 V ±20V 2180 pF @ 10 V - 45W (Tc) 150°C (TJ) Surface Mount
RJK0655DPB-00#J5

RJK0655DPB-00#J5

MOSFET N-CH 60V 35A LFPAK

Renesas Electronics America Inc
3,940 -

RFQ

RJK0655DPB-00#J5

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 35A (Ta) 10V 6.7mOhm @ 17.5A, 10V - 35 nC @ 10 V ±20V 2550 pF @ 10 V - 60W (Tc) 150°C (TJ) Surface Mount
RJK0855DPB-00#J5

RJK0855DPB-00#J5

MOSFET N-CH 80V 30A LFPAK

Renesas Electronics America Inc
2,500 -

RFQ

RJK0855DPB-00#J5

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 80 V 30A (Ta) 10V 11mOhm @ 15A, 10V - 35 nC @ 10 V ±20V 2550 pF @ 10 V - 60W (Tc) 150°C (TJ) Surface Mount
NP60N04MUK-S18-AY

NP60N04MUK-S18-AY

MOSFET N-CH 40V 60A TO220

Renesas Electronics America Inc
2,218 -

RFQ

NP60N04MUK-S18-AY

Datenblatt

Tube - Last Time Buy N-Channel MOSFET (Metal Oxide) 40 V 60A (Tc) 10V 4.3mOhm @ 30A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 3680 pF @ 25 V - 1.8W (Ta), 105W (Tc) 175°C (TJ) Through Hole
NP60N04NUK-S18-AY

NP60N04NUK-S18-AY

MOSFET N-CH 40V 60A TO262-3

Renesas Electronics America Inc
2,064 -

RFQ

NP60N04NUK-S18-AY

Datenblatt

Tube - Last Time Buy N-Channel MOSFET (Metal Oxide) 40 V 60A (Tc) 10V 4.3mOhm @ 30A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 3680 pF @ 25 V - 1.8W (Ta), 105W (Tc) 175°C (TJ) Through Hole
NP60N055MUK-S18-AY

NP60N055MUK-S18-AY

MOSFET N-CH 55V 60A TO220

Renesas Electronics America Inc
3,666 -

RFQ

NP60N055MUK-S18-AY

Datenblatt

Tube - Last Time Buy N-Channel MOSFET (Metal Oxide) 55 V 60A (Tc) 10V 6mOhm @ 30A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 3750 pF @ 25 V - 1.8W (Ta), 105W (Tc) 175°C (TJ) Through Hole
NP60N055NUK-S18-AY

NP60N055NUK-S18-AY

MOSFET N-CH 55V 60A TO262

Renesas Electronics America Inc
2,140 -

RFQ

NP60N055NUK-S18-AY

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 55 V 60A (Tc) 10V 6mOhm @ 30A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 3750 pF @ 25 V - 1.8W (Ta), 105W (Tc) 175°C (TJ) Through Hole
NP82N03PUG-E1-AY

NP82N03PUG-E1-AY

MOSFET N-CH 30V 82A TO263

Renesas Electronics America Inc
3,699 -

RFQ

NP82N03PUG-E1-AY

Datenblatt

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 82A (Tc) 10V 2.8mOhm @ 41A, 10V 4V @ 250µA 160 nC @ 10 V ±20V 9080 pF @ 25 V - 1.8W (Ta), 143W (Tc) 175°C (TJ) Surface Mount
NP88N04KUG-E1-AY

NP88N04KUG-E1-AY

MOSFET N-CH 40V 88A TO263

Renesas Electronics America Inc
2,074 -

RFQ

NP88N04KUG-E1-AY

Datenblatt

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 40 V 88A (Tc) 10V 2.9mOhm @ 44A, 10V 4V @ 250µA 250 nC @ 10 V ±20V 15000 pF @ 25 V - 1.8W (Ta), 200W (Tc) 175°C (TJ) Surface Mount
NP89N04MUK-S18-AY

NP89N04MUK-S18-AY

MOSFET N-CH 40V 90A TO220

Renesas Electronics America Inc
3,276 -

RFQ

NP89N04MUK-S18-AY

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 40 V 90A (Tc) 10V 3.3mOhm @ 45A, 10V 4V @ 250µA 102 nC @ 10 V ±20V 5850 pF @ 25 V - 1.8W (Ta), 147W (Tc) 175°C (TJ) Through Hole
NP89N04NUK-S18-AY

NP89N04NUK-S18-AY

MOSFET N-CH 40V 90A TO262

Renesas Electronics America Inc
2,158 -

RFQ

NP89N04NUK-S18-AY

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 40 V 90A (Tc) 10V 3.3mOhm @ 45A, 10V 4V @ 250µA 102 nC @ 10 V ±20V 5850 pF @ 25 V - 1.8W (Ta), 147W (Tc) 175°C (TJ) Through Hole
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1500+
1500+ Täglicher Durchschnitts-RFQ
20,000.000
20,000.000 Standardprodukteinheit
1800+
1800+ Weltweite Hersteller
15,000+
15,000+ Lagerbestand
Fudong Communication (shenzhen) Group Co., Ltd.

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Fudong Communication (shenzhen) Group Co., Ltd.

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Fudong Communication (shenzhen) Group Co., Ltd.

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