Transistoren – FETs, MOSFETs – Einzeltransistoren

Foto: Hersteller-Teilenummer Verfügbarkeit Preis Menge Datenblatt Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RFP6N50

RFP6N50

N-CHANNEL POWER MOSFET

Harris Corporation
1,793 -

RFQ

RFP6N50

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 6A (Tc) 10V 1.25Ohm @ 3A, 10V 4V @ 1mA - ±20V 1500 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF9541

IRF9541

P-CHANNEL POWER MOSFET

Harris Corporation
4,901 -

RFQ

IRF9541

Datenblatt

Bulk - Active P-Channel MOSFET (Metal Oxide) 80 V 19A (Tc) 10V 200mOhm @ 10A, 10V 4V @ 250µA 90 nC @ 10 V ±20V 1100 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUF76137S3S

HUF76137S3S

N-CHANNEL POWER MOSFET

Harris Corporation
197 -

RFQ

HUF76137S3S

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 4.5V, 10V 9mOhm @ 75A, 10V 3V @ 250µA 72 nC @ 10 V ±16V 2100 pF @ 25 V - 145W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRFD320

IRFD320

MOSFET N-CH 400V 490MA 4HVMDIP

Harris Corporation
812 -

RFQ

IRFD320

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 490mA (Ta) - 1.8Ohm @ 210mA, 10V 4V @ 250µA 20 nC @ 10 V ±20V 410 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
IRFP352

IRFP352

N-CHANNEL POWER MOSFET

Harris Corporation
436 -

RFQ

IRFP352

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 14A (Tc) 10V 400mOhm @ 8.9A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 2000 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP351

IRFP351

N-CHANNEL POWER MOSFET

Harris Corporation
323 -

RFQ

IRFP351

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 350 V 16A (Tc) 10V 300mOhm @ 8.9A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 2000 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP251

IRFP251

N-CHANNEL POWER MOSFET

Harris Corporation
265 -

RFQ

IRFP251

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 33A (Tc) 10V 85mOhm @ 17A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 2000 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP243

IRFP243

N-CHANNEL POWER MOSFET

Harris Corporation
181 -

RFQ

IRFP243

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 18A (Tc) 10V 220mOhm @ 10A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1275 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFF111

IRFF111

N-CHANNEL POWER MOSFET

Harris Corporation
176 -

RFQ

IRFF111

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 80 V 3.5A (Tc) 10V 600mOhm @ 1.5A, 10V 4V @ 250µA 7.5 nC @ 10 V ±20V 135 pF @ 25 V - 15W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFH30N12

RFH30N12

N-CHANNEL POWER MOSFET

Harris Corporation
268 -

RFQ

RFH30N12

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 120 V 30A (Tc) 10V 75mOhm @ 15A, 10V 4V @ 1mA - ±20V 3000 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP451

IRFP451

N-CHANNEL POWER MOSFET

Harris Corporation
538 -

RFQ

IRFP451

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 450 V 14A (Tc) 10V 400mOhm @ 7.9A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 2000 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFH10N50

RFH10N50

N-CHANNEL POWER MOSFET

Harris Corporation
302 -

RFQ

RFH10N50

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 10A (Tc) 10V 600mOhm @ 5A, 10V 4V @ 1mA - ±20V 3000 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP462

IRFP462

N-CHANNEL POWER MOSFET

Harris Corporation
152 -

RFQ

IRFP462

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 17A (Tc) 10V 350mOhm @ 11A, 10V 4V @ 250µA 190 nC @ 10 V ±20V 4100 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF353

IRF353

N-CHANNEL POWER MOSFET

Harris Corporation
460 -

RFQ

IRF353

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 350 V 13A (Tc) 10V 400mOhm @ 8A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 2000 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP362

IRFP362

N-CHANNEL POWER MOSFET

Harris Corporation
173 -

RFQ

IRFP362

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 20A (Tc) 10V 250mOhm @ 13A, 10V 4V @ 250µA 100 nC @ 10 V ±20V 4000 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFG50N05

RFG50N05

N-CHANNEL POWER MOSFET

Harris Corporation
145 -

RFQ

RFG50N05

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 50 V 50A (Tc) 10V 22mOhm @ 50A, 10V 4V @ 250nA 160 nC @ 20 V ±20V - - 132W (Tc) -55°C ~ 175°C (TJ) Through Hole
RFM10N50

RFM10N50

N-CHANNEL POWER MOSFET

Harris Corporation
143 -

RFQ

RFM10N50

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 10A (Tc) 10V 600mOhm @ 5A, 10V 4V @ 1mA - ±20V 3000 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
2N6760TXV

2N6760TXV

5.5A, 400V, 1OHM, N-CHANNEL

Harris Corporation
471 -

RFQ

2N6760TXV

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 5.5A (Tc) 10V 1Ohm @ 3.5A, 10V 4V @ 1mA - ±20V 800 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF623R

IRF623R

4A, 150V, 1.2OHM, N-CHANNEL MOSF

Harris Corporation
1,299 -

RFQ

IRF623R

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
HUF75339S3

HUF75339S3

MOSFET N-CH 55V 70A TO262AA

Harris Corporation
3,700 -

RFQ

HUF75339S3

Datenblatt

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 55 V 70A (Tc) - 12mOhm @ 70A, 10V 4V @ 250µA 130 nC @ 20 V ±20V 2000 pF @ 25 V - 124W (Tc) -55°C ~ 175°C (TJ) Through Hole
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1500+
1500+ Täglicher Durchschnitts-RFQ
20,000.000
20,000.000 Standardprodukteinheit
1800+
1800+ Weltweite Hersteller
15,000+
15,000+ Lagerbestand
Fudong Communication (shenzhen) Group Co., Ltd.

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Fudong Communication (shenzhen) Group Co., Ltd.

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Fudong Communication (shenzhen) Group Co., Ltd.

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Fudong Communication (shenzhen) Group Co., Ltd.

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