Transistoren – FETs, MOSFETs – Einzeltransistoren

Foto: Hersteller-Teilenummer Verfügbarkeit Preis Menge Datenblatt Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF3205L

IRF3205L

MOSFET N-CH 55V 110A TO262

Infineon Technologies
3,334 -

RFQ

IRF3205L

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 110A (Tc) 10V 8mOhm @ 62A, 10V 4V @ 250µA 146 nC @ 10 V ±20V 3247 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3315L

IRF3315L

MOSFET N-CH 150V 21A TO262

Infineon Technologies
3,555 -

RFQ

IRF3315L

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 21A (Tc) 10V 82mOhm @ 12A, 10V 4V @ 250µA 95 nC @ 10 V ±20V 1300 pF @ 25 V - 3.8W (Ta), 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3415L

IRF3415L

MOSFET N-CH 150V 43A TO262

Infineon Technologies
3,773 -

RFQ

IRF3415L

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 43A (Tc) 10V 42mOhm @ 22A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 2400 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3515L

IRF3515L

MOSFET N-CH 150V 41A TO262

Infineon Technologies
2,203 -

RFQ

IRF3515L

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 41A (Tc) 10V 45mOhm @ 25A, 10V 4.5V @ 250µA 107 nC @ 10 V ±30V 2260 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3704L

IRF3704L

MOSFET N-CH 20V 77A TO262

Infineon Technologies
3,692 -

RFQ

IRF3704L

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 77A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 1996 pF @ 10 V - 87W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3706L

IRF3706L

MOSFET N-CH 20V 77A TO262

Infineon Technologies
3,854 -

RFQ

IRF3706L

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 77A (Tc) 2.8V, 10V 8.5mOhm @ 15A, 10V 2V @ 250µA 35 nC @ 4.5 V ±12V 2410 pF @ 10 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3707L

IRF3707L

MOSFET N-CH 30V 62A TO262

Infineon Technologies
2,193 -

RFQ

IRF3707L

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 62A (Tc) 4.5V, 10V 12.5mOhm @ 15A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 1990 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3710L

IRF3710L

MOSFET N-CH 100V 57A TO262

Infineon Technologies
3,403 -

RFQ

IRF3710L

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 57A (Tc) 10V 23mOhm @ 28A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 3130 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF530NL

IRF530NL

MOSFET N-CH 100V 17A TO262

Infineon Technologies
2,435 -

RFQ

IRF530NL

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 17A (Tc) 10V 90mOhm @ 9A, 10V 4V @ 250µA 37 nC @ 10 V ±20V 920 pF @ 25 V - 3.8W (Ta), 70W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF540NL

IRF540NL

MOSFET N-CH 100V 33A TO262

Infineon Technologies
3,965 -

RFQ

IRF540NL

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 33A (Tc) 10V 44mOhm @ 16A, 10V 4V @ 250µA 71 nC @ 10 V ±20V 1960 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF640NL

IRF640NL

MOSFET N-CH 200V 18A TO262

Infineon Technologies
2,522 -

RFQ

IRF640NL

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 150mOhm @ 11A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1160 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL17N20D

IRFSL17N20D

MOSFET N-CH 200V 16A TO262

Infineon Technologies
3,326 -

RFQ

IRFSL17N20D

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 16A (Tc) 10V 170mOhm @ 9.8A, 10V 5.5V @ 250µA 50 nC @ 10 V ±30V 1100 pF @ 25 V - 3.8W (Ta), 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL23N15D

IRFSL23N15D

MOSFET N-CH 150V 23A TO262

Infineon Technologies
2,867 -

RFQ

IRFSL23N15D

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 23A (Tc) 10V 90mOhm @ 14A, 10V 5.5V @ 250µA 56 nC @ 10 V ±30V 1200 pF @ 25 V - 3.8W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL23N20D

IRFSL23N20D

MOSFET N-CH 200V 24A TO262

Infineon Technologies
2,358 -

RFQ

IRFSL23N20D

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 24A (Tc) 10V 100mOhm @ 14A, 10V 5.5V @ 250µA 86 nC @ 10 V ±30V 1960 pF @ 25 V - 3.8W (Ta), 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL33N15D

IRFSL33N15D

MOSFET N-CH 150V 33A TO262

Infineon Technologies
3,190 -

RFQ

IRFSL33N15D

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 33A (Tc) 10V 56mOhm @ 20A, 10V 5.5V @ 250µA 90 nC @ 10 V ±30V 2020 pF @ 25 V - 3.8W (Ta), 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL59N10D

IRFSL59N10D

MOSFET N-CH 100V 59A TO262

Infineon Technologies
2,874 -

RFQ

IRFSL59N10D

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 59A (Tc) 10V 25mOhm @ 35.4A, 10V 5.5V @ 250µA 114 nC @ 10 V ±30V 2450 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ24NL

IRFZ24NL

MOSFET N-CH 55V 17A TO262

Infineon Technologies
2,802 -

RFQ

IRFZ24NL

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 17A (Tc) 10V 70mOhm @ 10A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 370 pF @ 25 V - 3.8W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ34NL

IRFZ34NL

MOSFET N-CH 55V 29A TO262

Infineon Technologies
3,388 -

RFQ

IRFZ34NL

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 29A (Tc) 10V 40mOhm @ 16A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 700 pF @ 25 V - 3.8W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ44EL

IRFZ44EL

MOSFET N-CH 60V 48A TO262

Infineon Technologies
2,532 -

RFQ

IRFZ44EL

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 48A (Tc) 10V 23mOhm @ 29A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1360 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ46NL

IRFZ46NL

MOSFET N-CH 55V 53A TO262

Infineon Technologies
2,499 -

RFQ

IRFZ46NL

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 53A (Tc) 10V 16.5mOhm @ 28A, 10V 4V @ 250µA 72 nC @ 10 V ±20V 1696 pF @ 25 V - 3.8W (Ta), 107W (Tc) -55°C ~ 175°C (TJ) Through Hole
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1500+
1500+ Täglicher Durchschnitts-RFQ
20,000.000
20,000.000 Standardprodukteinheit
1800+
1800+ Weltweite Hersteller
15,000+
15,000+ Lagerbestand
Fudong Communication (shenzhen) Group Co., Ltd.

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