Transistoren – FETs, MOSFETs – Einzeltransistoren

Foto: Hersteller-Teilenummer Verfügbarkeit Preis Menge Datenblatt Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF2805PBF

IRF2805PBF

MOSFET N-CH 55V 75A TO220AB

Infineon Technologies
3,061 -

RFQ

IRF2805PBF

Datenblatt

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 4.7mOhm @ 104A, 10V 4V @ 250µA 230 nC @ 10 V ±20V 5110 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPP04N50C3XKSA1

SPP04N50C3XKSA1

SPP04N50 - COOLMOS N-CHANNEL POW

Infineon Technologies
2,153 -

RFQ

SPP04N50C3XKSA1

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
IRF9530NSTRLPBF

IRF9530NSTRLPBF

MOSFET P-CH 100V 14A D2PAK

Infineon Technologies
786 -

RFQ

IRF9530NSTRLPBF

Datenblatt

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active P-Channel MOSFET (Metal Oxide) 100 V 14A (Tc) 10V 200mOhm @ 8.4A, 10V 4V @ 250µA 58 nC @ 10 V ±20V 760 pF @ 25 V - 3.8W (Ta), 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6215STRLPBF

IRF6215STRLPBF

MOSFET P-CH 150V 13A D2PAK

Infineon Technologies
2,223 -

RFQ

IRF6215STRLPBF

Datenblatt

Tape & Reel (TR),Cut Tape (CT) HEXFET® Not For New Designs P-Channel MOSFET (Metal Oxide) 150 V 13A (Tc) 10V 290mOhm @ 6.6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 860 pF @ 25 V - 3.8W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLB8748PBF

IRLB8748PBF

MOSFET N-CH 30V 92A TO220AB

Infineon Technologies
425 -

RFQ

IRLB8748PBF

Datenblatt

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 92A (Tc) 4.5V, 10V 4.8mOhm @ 40A, 10V 2.35V @ 50µA 23 nC @ 4.5 V ±20V 2139 pF @ 15 V - 75W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF200B211

IRF200B211

MOSFET N-CH 200V 12A TO220AB

Infineon Technologies
443 -

RFQ

IRF200B211

Datenblatt

Tube HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 200 V 12A (Tc) 10V 170mOhm @ 7.2A, 10V 4.9V @ 50µA 23 nC @ 10 V ±20V 790 pF @ 50 V - 80W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP055N03LGXKSA1

IPP055N03LGXKSA1

MOSFET N-CH 30V 50A TO220-3

Infineon Technologies
629 -

RFQ

IPP055N03LGXKSA1

Datenblatt

Tube OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 5.5mOhm @ 30A, 10V 2.2V @ 250µA 31 nC @ 10 V ±20V 3200 pF @ 15 V - 68W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSD214SNH6327

BSD214SNH6327

BSD314 - 250V-600V SMALL SIGNAL/

Infineon Technologies
3,290 -

RFQ

BSD214SNH6327

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
IRFB4510PBF

IRFB4510PBF

MOSFET N-CH 100V 62A TO220AB

Infineon Technologies
994 -

RFQ

IRFB4510PBF

Datenblatt

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 62A (Tc) 10V 13.5mOhm @ 37A, 10V 4V @ 100µA 87 nC @ 10 V ±20V 3180 pF @ 50 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP040N06NAKSA1

IPP040N06NAKSA1

MOSFET N-CH 60V 20A/80A TO220-3

Infineon Technologies
326 -

RFQ

IPP040N06NAKSA1

Datenblatt

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 20A (Ta), 80A (Tc) 6V, 10V 4mOhm @ 80A, 10V 2.8V @ 50µA 38 nC @ 10 V ±20V 2700 pF @ 30 V - 3W (Ta), 107W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP042N03LGXKSA1

IPP042N03LGXKSA1

MOSFET N-CH 30V 70A TO220-3

Infineon Technologies
141 -

RFQ

IPP042N03LGXKSA1

Datenblatt

Tube OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 70A (Tc) 4.5V, 10V 4.2mOhm @ 30A, 10V 2.2V @ 250µA 38 nC @ 10 V ±20V 3900 pF @ 15 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLB8743PBF

IRLB8743PBF

MOSFET N-CH 30V 78A TO220AB

Infineon Technologies
643 -

RFQ

IRLB8743PBF

Datenblatt

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 78A (Tc) 4.5V, 10V 3.2mOhm @ 40A, 10V 2.35V @ 100µA 54 nC @ 4.5 V ±20V 5110 pF @ 15 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPA70R360P7SXKSA1

IPA70R360P7SXKSA1

MOSFET N-CH 700V 12.5A TO220

Infineon Technologies
181 -

RFQ

IPA70R360P7SXKSA1

Datenblatt

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 700 V 12.5A (Tc) 10V 360mOhm @ 3A, 10V 3.5V @ 150µA 16.4 nC @ 10 V ±16V 517 pF @ 400 V - 26.4W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPP060N06NAKSA1

IPP060N06NAKSA1

MOSFET N-CH 60V 17A/45A TO220-3

Infineon Technologies
198 -

RFQ

IPP060N06NAKSA1

Datenblatt

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Ta), 45A (Tc) 6V, 10V 6mOhm @ 45A, 10V 2.8V @ 36µA 27 nC @ 10 V ±20V 2000 pF @ 30 V - 3W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3705ZPBF

IRL3705ZPBF

MOSFET N-CH 55V 75A TO220AB

Infineon Technologies
719 -

RFQ

IRL3705ZPBF

Datenblatt

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 4.5V, 10V 8mOhm @ 52A, 10V 3V @ 250µA 60 nC @ 5 V ±16V 2880 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPD135N03LG

IPD135N03LG

OPTLMOS N-CHANNEL POWER MOSFET

Infineon Technologies
3,092 -

RFQ

IPD135N03LG

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
BSC0906NS

BSC0906NS

BSC0906 - 12V-300V N-CHANNEL POW

Infineon Technologies
2,486 -

RFQ

BSC0906NS

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
IPN65R1K5CE

IPN65R1K5CE

SMALL SIGNAL FIELD-EFFECT TRANSI

Infineon Technologies
3,162 -

RFQ

IPN65R1K5CE

Datenblatt

Bulk CoolMOS™ CE Active N-Channel MOSFET (Metal Oxide) 650 V 5.2A (Tc) 10V 1.5Ohm @ 1A, 10V 3.5V @ 100µA 10.5 nC @ 10 V ±20V 225 pF @ 100 V - 5W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRFB3306GPBF

IRFB3306GPBF

MOSFET N-CH 60V 120A TO220AB

Infineon Technologies
984 -

RFQ

IRFB3306GPBF

Datenblatt

Tube HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 4.2mOhm @ 75A, 10V 4V @ 150µA 120 nC @ 10 V ±20V 4520 pF @ 50 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ44VZPBF

IRFZ44VZPBF

MOSFET N-CH 60V 57A TO220AB

Infineon Technologies
900 -

RFQ

IRFZ44VZPBF

Datenblatt

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 57A (Tc) 10V 12mOhm @ 34A, 10V 4V @ 250µA 65 nC @ 10 V ±20V 1690 pF @ 25 V - 92W (Tc) -55°C ~ 175°C (TJ) Through Hole
Total 8399 Record«Prev1... 385386387388389390391392...420Next»
1500+
1500+ Täglicher Durchschnitts-RFQ
20,000.000
20,000.000 Standardprodukteinheit
1800+
1800+ Weltweite Hersteller
15,000+
15,000+ Lagerbestand
Fudong Communication (shenzhen) Group Co., Ltd.

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