Transistoren – FETs, MOSFETs – Einzeltransistoren

Foto: Hersteller-Teilenummer Verfügbarkeit Preis Menge Datenblatt Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPD60R800CEAUMA1

IPD60R800CEAUMA1

CONSUMER

Infineon Technologies
2,271 -

RFQ

IPD60R800CEAUMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 8.4A (Tc) 10V 800mOhm @ 2A, 10V 3.5V @ 170µA 17.2 nC @ 10 V ±20V 373 pF @ 100 V - 74W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPU80R750P7AKMA1

IPU80R750P7AKMA1

IPU80R750 - 800V COOLMOS N-CHANN

Infineon Technologies
14,025 -

RFQ

IPU80R750P7AKMA1

Datenblatt

Bulk CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 800 V 7A (Tc) 10V 750mOhm @ 2.7A, 10V 3.5V @ 140µA 17 nC @ 10 V ±20V 460 pF @ 500 V - 51W (Tc) -55°C ~ 150°C (TJ) Through Hole
IAUC60N04S6L039ATMA1

IAUC60N04S6L039ATMA1

IAUC60N04S6L039ATMA1

Infineon Technologies
4,256 -

RFQ

IAUC60N04S6L039ATMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 60A (Tc) 4.5V, 10V 4.02mOhm @ 30A, 10V 2V @ 14µA 20 nC @ 10 V ±16V 1179 pF @ 25 V - 42W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFH8324TRPBF

IRFH8324TRPBF

MOSFET N-CH 30V 23A/90A PQFN

Infineon Technologies
2,238 -

RFQ

IRFH8324TRPBF

Datenblatt

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 23A (Ta), 90A (Tc) 4.5V, 10V 4.1mOhm @ 20A, 10V 2.35V @ 50µA 31 nC @ 10 V ±20V 2380 pF @ 10 V - 3.6W (Ta), 54W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD14N06S280ATMA2

IPD14N06S280ATMA2

MOSFET N-CH 55V 17A TO252-31

Infineon Technologies
2,460 -

RFQ

IPD14N06S280ATMA2

Datenblatt

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 17A (Tc) 10V 80mOhm @ 7A, 10V 4V @ 14µA 10 nC @ 10 V ±20V 293 pF @ 25 V - 47W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD60R1K5PFD7SAUMA1

IPD60R1K5PFD7SAUMA1

MOSFET N-CH 650V 3.6A TO252

Infineon Technologies
1,615 -

RFQ

Tape & Reel (TR),Cut Tape (CT) CoolMOS™PFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 3.6A (Tc) 10V 1.5Ohm @ 700mA, 10V 4.5V @ 40µA 4.6 nC @ 10 V ±20V 169 pF @ 400 V - 22W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPP70N04S406AKSA1

IPP70N04S406AKSA1

MOSFET_(20V,40V)

Infineon Technologies
11,900 -

RFQ

IPP70N04S406AKSA1

Datenblatt

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 70A (Tc) 10V 6.5mOhm @ 70A, 10V 4V @ 26µA 32 nC @ 10 V ±20V 2550 pF @ 25 V - 58W (Tc) -55°C ~ 175°C (TJ) Through Hole
ISZ0501NLSATMA1

ISZ0501NLSATMA1

25V, N-CH MOSFET, LOGIC LEVEL, P

Infineon Technologies
4,974 -

RFQ

Tape & Reel (TR),Cut Tape (CT) * Active - - - - - - - - - - - - - -
BSP296NH6327XTSA1

BSP296NH6327XTSA1

MOSFET N-CH 100V 1.2A SOT223-4

Infineon Technologies
1,407 -

RFQ

BSP296NH6327XTSA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 1.2A (Ta) 4.5V, 10V 600mOhm @ 1.2A, 10V 1.8V @ 100µA 6.7 nC @ 10 V ±20V 152.7 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPZA60R024P7XKSA1

IPZA60R024P7XKSA1

MOSFET N-CH 600V 101A TO247-4-3

Infineon Technologies
2,889 -

RFQ

IPZA60R024P7XKSA1

Datenblatt

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 101A (Tc) 10V 24mOhm @ 42A, 10V 4V @ 2.03mA 164 nC @ 10 V ±20V 7144 pF @ 400 V - 291W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPD50N04S408ATMA1

IPD50N04S408ATMA1

MOSFET N-CH 40V 50A TO252-3

Infineon Technologies
421 -

RFQ

IPD50N04S408ATMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 10V 7.9mOhm @ 50A, 10V 4V @ 17µA 22.4 nC @ 10 V ±20V 1780 pF @ 6 V - 46W (Tc) -55°C ~ 175°C (TJ) Surface Mount
ISC019N03L5SATMA1

ISC019N03L5SATMA1

MOSFET N-CH 30V 28A/100A TDSON

Infineon Technologies
6,585 -

RFQ

ISC019N03L5SATMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 28A (Ta), 100A (Tc) 4.5V, 10V 1.9mOhm @ 30A, 10V 2V @ 250µA 44 nC @ 10 V ±20V 2800 pF @ 15 V - 2.5W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IAUC100N04S6L025ATMA1

IAUC100N04S6L025ATMA1

IAUC100N04S6L025ATMA1

Infineon Technologies
1,410 -

RFQ

IAUC100N04S6L025ATMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 4.5V, 10V 2.56mOhm @ 50A, 10V 2V @ 24µA 34 nC @ 10 V ±16V 2019 pF @ 25 V - 62W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSF024N03LT3GXUMA1

BSF024N03LT3GXUMA1

MOSFET N-CH 30V 15A/106A 2WDSON

Infineon Technologies
5,000 -

RFQ

BSF024N03LT3GXUMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta), 106A (Tc) 4.5V, 10V 2.4mOhm @ 20A, 10V 2.2V @ 250µA 71 nC @ 10 V ±20V 5500 pF @ 15 V - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPD50R500CEAUMA1

IPD50R500CEAUMA1

MOSFET N-CH 550V 7.6A TO252

Infineon Technologies
1,344 -

RFQ

IPD50R500CEAUMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 550 V 7.6A (Tc) 13V 500mOhm @ 2.3A, 13V 3.5V @ 200µA 18.7 nC @ 10 V ±20V 433 pF @ 100 V - 57W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF7403TRPBF

IRF7403TRPBF

MOSFET N-CH 30V 8.5A 8SO

Infineon Technologies
2,925 -

RFQ

IRF7403TRPBF

Datenblatt

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 8.5A (Ta) 4.5V, 10V 22mOhm @ 4A, 10V 1V @ 250µA 57 nC @ 10 V ±20V 1200 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSC026N02KSG

BSC026N02KSG

BSC026N02 - 12V-300V N-CHANNEL P

Infineon Technologies
38,580 -

RFQ

BSC026N02KSG

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
IPDH4N03LAG

IPDH4N03LAG

MOSFET N-CH 25V 90A TO252-3

Infineon Technologies
2,390 -

RFQ

IPDH4N03LAG

Datenblatt

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 90A (Tc) 4.5V, 10V 4.2mOhm @ 60A, 10V 2V @ 40µA 26 nC @ 5 V ±20V 3200 pF @ 15 V - 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR120NTRLPBF

IRLR120NTRLPBF

MOSFET N-CH 100V 10A DPAK

Infineon Technologies
2,168 -

RFQ

IRLR120NTRLPBF

Datenblatt

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 10A (Tc) 4V, 10V 185mOhm @ 6A, 10V 2V @ 250µA 20 nC @ 5 V ±16V 440 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPI45N06S4-09AKSA2

IPI45N06S4-09AKSA2

IPI45N06 - 55V-60V N-CHANNEL AUT

Infineon Technologies
97,500 -

RFQ

IPI45N06S4-09AKSA2

Datenblatt

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 45A (Tc) 10V 9.4mOhm @ 45A, 10V 4V @ 34µA 47 nC @ 10 V ±20V 3785 pF @ 25 V - 71W (Tc) -55°C ~ 175°C (TJ) Through Hole
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1500+
1500+ Täglicher Durchschnitts-RFQ
20,000.000
20,000.000 Standardprodukteinheit
1800+
1800+ Weltweite Hersteller
15,000+
15,000+ Lagerbestand
Fudong Communication (shenzhen) Group Co., Ltd.

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