Transistoren – FETs, MOSFETs – Einzeltransistoren

Foto: Hersteller-Teilenummer Verfügbarkeit Preis Menge Datenblatt Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AUIRF2804L-313

AUIRF2804L-313

MOSFET N-CH 40V 195A TO262

Infineon Technologies
3,196 -

RFQ

Tube Automotive, AEC-Q101, HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 2.3mOhm @ 75A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 6450 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFSL4010-306

AUIRFSL4010-306

MOSFET N-CH 100V 180A TO262

Infineon Technologies
3,738 -

RFQ

Tube Automotive, AEC-Q101, HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 4.7mOhm @ 106A, 10V 4V @ 250µA 215 nC @ 10 V ±20V 9575 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUXMAFS4010-7TRL

AUXMAFS4010-7TRL

MOSFET N-CH SMD D2PAK

Infineon Technologies
3,102 -

RFQ

Tape & Reel (TR) - Obsolete - - - - - - - - - - - - - -
AUIRFSL4010-313

AUIRFSL4010-313

MOSFET N-CH 100V 180A TO262

Infineon Technologies
2,296 -

RFQ

Tube Automotive, AEC-Q101, HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 4.7mOhm @ 106A, 10V 4V @ 250µA 215 nC @ 10 V ±20V 9575 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFC8408TR

AUIRFC8408TR

MOSFET N-CH SMD D2PAK

Infineon Technologies
2,172 -

RFQ

Tape & Reel (TR) - Obsolete - - - - - - - - - - - - - -
SPA20N65C3XKSA1

SPA20N65C3XKSA1

MOSFET N-CH 650V 20.7A TO220-3

Infineon Technologies
975 -

RFQ

SPA20N65C3XKSA1

Datenblatt

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 20.7A (Tc) 10V 190mOhm @ 13.1A, 10V 3.9V @ 1mA 114 nC @ 10 V ±20V 2400 pF @ 25 V - 34.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRFSA8409-7P

AUIRFSA8409-7P

MOSFET N-CH 40V 523A D2PAK

Infineon Technologies
2,592 -

RFQ

AUIRFSA8409-7P

Datenblatt

Tube Automotive, AEC-Q101, HEXFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 40 V 523A (Tc) 10V 0.69mOhm @ 100A, 10V 3.9V @ 250µA 460 nC @ 10 V ±20V 13975 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS4010-7TRL

AUIRFS4010-7TRL

MOSFET N-CH 100V 190A D2PAK-7P

Infineon Technologies
3,047 -

RFQ

AUIRFS4010-7TRL

Datenblatt

Tape & Reel (TR) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 190A (Tc) - 4mOhm @ 110A, 10V 4V @ 250µA 230 nC @ 10 V - 9830 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP65R110CFDXKSA1

IPP65R110CFDXKSA1

MOSFET N-CH 700V 31.2A TO220-3

Infineon Technologies
3,651 -

RFQ

IPP65R110CFDXKSA1

Datenblatt

Bulk CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 700 V 31.2A (Tc) 10V 110mOhm @ 12.7A, 10V 4.5V @ 1.3mA 118 nC @ 10 V ±20V 3240 pF @ 100 V - 277.8W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP65R110CFDXKSA2

IPP65R110CFDXKSA2

MOSFET N-CH 650V 31.2A TO220-3

Infineon Technologies
2,807 -

RFQ

IPP65R110CFDXKSA2

Datenblatt

Tube CoolMOS™ CFD2 Active N-Channel MOSFET (Metal Oxide) 650 V 31.2A (Tc) 10V 110mOhm @ 12.7A, 10V 4.5V @ 1.3mA 118 nC @ 10 V ±20V 3240 pF @ 100 V - 277.8W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA65R110CFDXKSA1

IPA65R110CFDXKSA1

MOSFET N-CH 650V 31.2A TO220

Infineon Technologies
3,081 -

RFQ

IPA65R110CFDXKSA1

Datenblatt

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 31.2A (Tc) 10V 110mOhm @ 12.7A, 10V 4.5V @ 1.3mA 118 nC @ 10 V ±20V 3240 pF @ 100 V - 34.7W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA65R110CFDXKSA2

IPA65R110CFDXKSA2

MOSFET N-CH 650V 31.2A TO220

Infineon Technologies
2,984 -

RFQ

IPA65R110CFDXKSA2

Datenblatt

Tube CoolMOS™ CFD2 Active N-Channel MOSFET (Metal Oxide) 650 V 31.2A (Tc) 10V 110mOhm @ 12.7A, 10V 4.5V @ 1.3mA 118 nC @ 10 V ±20V 3240 pF @ 100 V - 34.7W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRFS4127TRL

AUIRFS4127TRL

MOSFET N-CH 200V 72A D2PAK

Infineon Technologies
3,428 -

RFQ

AUIRFS4127TRL

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101, HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 200 V 72A (Tc) 10V 22mOhm @ 44A, 10V 5V @ 250µA 150 nC @ 10 V ±20V 5380 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL60SL216

IRL60SL216

MOSFET N-CH 60V 195A TO262-3

Infineon Technologies
893 -

RFQ

IRL60SL216

Datenblatt

Tube HEXFET®, StrongIRFET™ Last Time Buy N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 4.5V, 10V 1.95mOhm @ 100A, 10V 2.4V @ 250µA 255 nC @ 4.5 V ±20V 15330 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFS3107-7TRL

AUIRFS3107-7TRL

MOSFET N-CH 75V 240A D2PAK-7

Infineon Technologies
3,342 -

RFQ

AUIRFS3107-7TRL

Datenblatt

Tape & Reel (TR),Bulk HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 75 V 240A (Tc) - 2.6mOhm @ 160A, 10V 4V @ 250µA 240 nC @ 10 V - 9200 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA60R125CPXKSA1

IPA60R125CPXKSA1

MOSFET N-CH 650V 25A TO220-FP

Infineon Technologies
2,293 -

RFQ

IPA60R125CPXKSA1

Datenblatt

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 25A (Tc) 10V 125mOhm @ 16A, 10V 3.5V @ 1.1mA 70 nC @ 10 V ±20V 2500 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI60R125CPXKSA1

IPI60R125CPXKSA1

MOSFET N-CH 650V 25A TO262-3

Infineon Technologies
3,549 -

RFQ

IPI60R125CPXKSA1

Datenblatt

Bulk,Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 25A (Tc) 10V 125mOhm @ 16A, 10V 3.5V @ 1.1mA 70 nC @ 10 V ±20V 2500 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW50R140CPFKSA1

IPW50R140CPFKSA1

MOSFET N-CH 550V 23A TO247-3

Infineon Technologies
50,381 -

RFQ

IPW50R140CPFKSA1

Datenblatt

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 550 V 23A (Tc) 10V 140mOhm @ 14A, 10V 3.5V @ 930µA 64 nC @ 10 V ±20V 2540 pF @ 100 V - 192W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRFS4115TRL

AUIRFS4115TRL

MOSFET N-CH 150V 99A D2PAK

Infineon Technologies
3,993 -

RFQ

AUIRFS4115TRL

Datenblatt

Tape & Reel (TR) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 150 V 99A (Tc) 10V 12.1mOhm @ 62A, 10V 5V @ 250µA 120 nC @ 10 V ±20V 5270 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPW65R150CFDAFKSA1

IPW65R150CFDAFKSA1

MOSFET N-CH 650V 22.4A TO247-3

Infineon Technologies
3,326 -

RFQ

IPW65R150CFDAFKSA1

Datenblatt

Bulk,Tube Automotive, AEC-Q101, CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 22.4A (Tc) 10V 150mOhm @ 9.3A, 10V 4.5V @ 900µA 86 nC @ 10 V ±20V 2340 pF @ 100 V - 195.3W (Tc) -40°C ~ 150°C (TJ) Through Hole
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1500+
1500+ Täglicher Durchschnitts-RFQ
20,000.000
20,000.000 Standardprodukteinheit
1800+
1800+ Weltweite Hersteller
15,000+
15,000+ Lagerbestand
Fudong Communication (shenzhen) Group Co., Ltd.

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