Transistoren – FETs, MOSFETs – Einzeltransistoren

Foto: Hersteller-Teilenummer Verfügbarkeit Preis Menge Datenblatt Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SPA04N50C3XKSA1

SPA04N50C3XKSA1

MOSFET N-CH 560V 4.5A TO220-FP

Infineon Technologies
2,178 -

RFQ

SPA04N50C3XKSA1

Datenblatt

Tube,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 560 V 4.5A (Tc) 10V 950mOhm @ 2.8A, 10V 3.9V @ 200µA 22 nC @ 10 V ±20V 470 pF @ 25 V - 31W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP04N03LA

IPP04N03LA

MOSFET N-CH 25V 80A TO220-3

Infineon Technologies
2,570 -

RFQ

IPP04N03LA

Datenblatt

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 80A (Tc) 4.5V, 10V 4.2mOhm @ 55A, 10V 2V @ 60µA 32 nC @ 5 V ±20V 3877 pF @ 15 V - 107W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPP04N50C3HKSA1

SPP04N50C3HKSA1

MOSFET N-CH 560V 4.5A TO220-3

Infineon Technologies
2,317 -

RFQ

SPP04N50C3HKSA1

Datenblatt

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 560 V 4.5A (Tc) 10V 950mOhm @ 2.8A, 10V 3.9V @ 200µA 22 nC @ 10 V ±20V 470 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPP20N60C3HKSA1

SPP20N60C3HKSA1

MOSFET N-CH 600V 20.7A TO220-3

Infineon Technologies
3,875 -

RFQ

SPP20N60C3HKSA1

Datenblatt

Bulk CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 20.7A (Tc) 10V 190mOhm @ 13.1A, 10V 3.9V @ 1mA 114 nC @ 10 V ±20V 2400 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPP21N50C3HKSA1

SPP21N50C3HKSA1

MOSFET N-CH 560V 21A TO220-3

Infineon Technologies
2,425 -

RFQ

SPP21N50C3HKSA1

Datenblatt

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 560 V 21A (Tc) 10V 190mOhm @ 13.1A, 10V 3.9V @ 1mA 95 nC @ 10 V ±20V 2400 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPA21N50C3XKSA1

SPA21N50C3XKSA1

MOSFET N-CH 560V 21A TO220-FP

Infineon Technologies
2,499 -

RFQ

SPA21N50C3XKSA1

Datenblatt

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 560 V 21A (Tc) 10V 190mOhm @ 13.1A, 10V 3.9V @ 1mA 95 nC @ 10 V ±20V 2400 pF @ 25 V - 34.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPP02N60C3HKSA1

SPP02N60C3HKSA1

MOSFET N-CH 650V 1.8A TO220-3

Infineon Technologies
3,218 -

RFQ

SPP02N60C3HKSA1

Datenblatt

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 1.8A (Tc) 10V 3Ohm @ 1.1A, 10V 3.9V @ 80µA 12.5 nC @ 10 V ±20V 200 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPP03N60C3HKSA1

SPP03N60C3HKSA1

MOSFET N-CH 650V 3.2A TO220-3

Infineon Technologies
2,596 -

RFQ

SPP03N60C3HKSA1

Datenblatt

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 3.2A (Tc) 10V 1.4Ohm @ 2A, 10V 3.9V @ 135µA 17 nC @ 10 V ±20V 400 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPI07N60C3HKSA1

SPI07N60C3HKSA1

MOSFET N-CH 650V 7.3A TO262-3

Infineon Technologies
3,323 -

RFQ

SPI07N60C3HKSA1

Datenblatt

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 7.3A (Tc) 10V 600mOhm @ 4.6A, 10V 3.9V @ 350µA 27 nC @ 10 V ±20V 790 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPP16N50C3HKSA1

SPP16N50C3HKSA1

MOSFET N-CH 560V 16A TO220-3

Infineon Technologies
2,829 -

RFQ

SPP16N50C3HKSA1

Datenblatt

Bulk,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 560 V 16A (Tc) 10V 280mOhm @ 10A, 10V 3.9V @ 675µA 66 nC @ 10 V ±20V 1600 pF @ 25 V - 160W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPA12N50C3XKSA1

SPA12N50C3XKSA1

MOSFET N-CH 560V 11.6A TO220-FP

Infineon Technologies
2,178 -

RFQ

SPA12N50C3XKSA1

Datenblatt

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 560 V 11.6A (Tc) 10V 380mOhm @ 7A, 10V 3.9V @ 500µA 49 nC @ 10 V ±20V 1200 pF @ 25 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPP12N50C3HKSA1

SPP12N50C3HKSA1

MOSFET N-CH 560V 11.6A TO220-3

Infineon Technologies
2,400 -

RFQ

SPP12N50C3HKSA1

Datenblatt

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 560 V 11.6A (Tc) 10V 380mOhm @ 7A, 10V 3.9V @ 500µA 49 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPA04N60C3XKSA1

SPA04N60C3XKSA1

MOSFET N-CH 650V 4.5A TO220-FP

Infineon Technologies
3,465 -

RFQ

SPA04N60C3XKSA1

Datenblatt

Tube,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 4.5A (Tc) 10V 950mOhm @ 2.8A, 10V 3.9V @ 200µA 25 nC @ 10 V ±20V 490 pF @ 25 V - 31W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPP04N60C3HKSA1

SPP04N60C3HKSA1

MOSFET N-CH 650V 4.5A TO220-3

Infineon Technologies
2,127 -

RFQ

SPP04N60C3HKSA1

Datenblatt

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 4.5A (Tc) 10V 950mOhm @ 2.8A, 10V 3.9V @ 200µA 25 nC @ 10 V ±20V 490 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPP08N50C3XKSA1

SPP08N50C3XKSA1

MOSFET N-CH 560V 7.6A TO220-3

Infineon Technologies
2,241 -

RFQ

SPP08N50C3XKSA1

Datenblatt

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 560 V 7.6A (Tc) 10V 600mOhm @ 4.6A, 10V 3.9V @ 350µA 32 nC @ 10 V ±20V 750 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPA08N50C3XKSA1

SPA08N50C3XKSA1

MOSFET N-CH 560V 7.6A TO220-FP

Infineon Technologies
2,823 -

RFQ

SPA08N50C3XKSA1

Datenblatt

Tube,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 560 V 7.6A (Tc) 10V 600mOhm @ 4.6A, 10V 3.9V @ 350µA 32 nC @ 10 V ±20V 750 pF @ 25 V - 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
BSL207SP

BSL207SP

MOSFET P-CH 20V 6A TSOP-6

Infineon Technologies
3,393 -

RFQ

BSL207SP

Datenblatt

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 20 V 6A (Ta) 2.5V, 4.5V 41mOhm @ 6A, 4.5V 1.2V @ 40µA 20 nC @ 4.5 V ±12V 1007 pF @ 15 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSL211SP

BSL211SP

MOSFET P-CH 20V 4.7A TSOP-6

Infineon Technologies
2,496 -

RFQ

BSL211SP

Datenblatt

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4.7A (Ta) 2.5V, 4.5V 67mOhm @ 4.7A, 4.5V 1.2V @ 25µA 12.4 nC @ 4.5 V ±12V 654 pF @ 15 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSL307SP

BSL307SP

MOSFET P-CH 30V 5.5A TSOP-6

Infineon Technologies
2,300 -

RFQ

BSL307SP

Datenblatt

Tape & Reel (TR) OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 30 V 5.5A (Ta) 4.5V, 10V 43mOhm @ 5.5A, 10V 2V @ 40µA 29 nC @ 10 V ±20V 805 pF @ 25 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSO201SPNTMA1

BSO201SPNTMA1

MOSFET P-CH 20V 14.9A 8DSO

Infineon Technologies
2,011 -

RFQ

BSO201SPNTMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 20 V 14.9A (Ta) 2.5V, 4.5V 8mOhm @ 14.9A, 4.5V 1.2V @ 250µA 128 nC @ 4.5 V ±12V 5962 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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1500+
1500+ Täglicher Durchschnitts-RFQ
20,000.000
20,000.000 Standardprodukteinheit
1800+
1800+ Weltweite Hersteller
15,000+
15,000+ Lagerbestand
Fudong Communication (shenzhen) Group Co., Ltd.

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