Transistoren – FETs, MOSFETs – Einzeltransistoren

Foto: Hersteller-Teilenummer Verfügbarkeit Preis Menge Datenblatt Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF3704STRR

IRF3704STRR

MOSFET N-CH 20V 77A D2PAK

Infineon Technologies
2,441 -

RFQ

IRF3704STRR

Datenblatt

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 77A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 1996 pF @ 10 V - 87W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3706STRL

IRF3706STRL

MOSFET N-CH 20V 77A D2PAK

Infineon Technologies
3,001 -

RFQ

IRF3706STRL

Datenblatt

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 77A (Tc) 2.8V, 10V 8.5mOhm @ 15A, 10V 2V @ 250µA 35 nC @ 4.5 V ±12V 2410 pF @ 10 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3706STRR

IRF3706STRR

MOSFET N-CH 20V 77A D2PAK

Infineon Technologies
3,682 -

RFQ

IRF3706STRR

Datenblatt

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 77A (Tc) 2.8V, 10V 8.5mOhm @ 15A, 10V 2V @ 250µA 35 nC @ 4.5 V ±12V 2410 pF @ 10 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3707

IRF3707

MOSFET N-CH 30V 62A TO220AB

Infineon Technologies
3,409 -

RFQ

IRF3707

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 62A (Tc) 4.5V, 10V 12.5mOhm @ 15A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 1990 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3707STRL

IRF3707STRL

MOSFET N-CH 30V 62A D2PAK

Infineon Technologies
3,996 -

RFQ

IRF3707STRL

Datenblatt

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 62A (Tc) 4.5V, 10V 12.5mOhm @ 15A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 1990 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3707STRR

IRF3707STRR

MOSFET N-CH 30V 62A D2PAK

Infineon Technologies
3,755 -

RFQ

IRF3707STRR

Datenblatt

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 62A (Tc) 4.5V, 10V 12.5mOhm @ 15A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 1990 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3708

IRF3708

MOSFET N-CH 30V 62A TO220AB

Infineon Technologies
2,788 -

RFQ

IRF3708

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 62A (Tc) 2.8V, 10V 12mOhm @ 15A, 10V 2V @ 250µA 24 nC @ 4.5 V ±12V 2417 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3708S

IRF3708S

MOSFET N-CH 30V 62A D2PAK

Infineon Technologies
2,673 -

RFQ

IRF3708S

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 62A (Tc) 2.8V, 10V 12mOhm @ 15A, 10V 2V @ 250µA 24 nC @ 4.5 V ±12V 2417 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3708STRL

IRF3708STRL

MOSFET N-CH 30V 62A D2PAK

Infineon Technologies
3,002 -

RFQ

IRF3708STRL

Datenblatt

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 62A (Tc) 2.8V, 10V 12mOhm @ 15A, 10V 2V @ 250µA 24 nC @ 4.5 V ±12V 2417 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3708STRR

IRF3708STRR

MOSFET N-CH 30V 62A D2PAK

Infineon Technologies
2,992 -

RFQ

IRF3708STRR

Datenblatt

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 62A (Tc) 2.8V, 10V 12mOhm @ 15A, 10V 2V @ 250µA 24 nC @ 4.5 V ±12V 2417 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF4905STRR

IRF4905STRR

MOSFET P-CH 55V 74A D2PAK

Infineon Technologies
3,954 -

RFQ

IRF4905STRR

Datenblatt

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 74A (Tc) 10V 20mOhm @ 38A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 3400 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF520NL

IRF520NL

MOSFET N-CH 100V 9.7A TO262

Infineon Technologies
2,254 -

RFQ

IRF520NL

Datenblatt

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 9.7A (Tc) 10V 200mOhm @ 5.7A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 330 pF @ 25 V - 3.8W (Ta), 48W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF520NSTRL

IRF520NSTRL

MOSFET N-CH 100V 9.7A D2PAK

Infineon Technologies
2,946 -

RFQ

IRF520NSTRL

Datenblatt

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 9.7A (Tc) 10V 200mOhm @ 5.7A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 330 pF @ 25 V - 3.8W (Ta), 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF520NSTRR

IRF520NSTRR

MOSFET N-CH 100V 9.7A D2PAK

Infineon Technologies
3,965 -

RFQ

IRF520NSTRR

Datenblatt

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 9.7A (Tc) 10V 200mOhm @ 5.7A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 330 pF @ 25 V - 3.8W (Ta), 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IMW65R057M1HXKSA1

IMW65R057M1HXKSA1

SILICON CARBIDE MOSFET, PG-TO247

Infineon Technologies
2,038 -

RFQ

IMW65R057M1HXKSA1

Datenblatt

Tube CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 650 V 35A (Tc) 18V 74mOhm @ 16.7A, 18V 5.7V @ 5mA 28 nC @ 18 V +20V, -2V 930 pF @ 400 V - 133W (Tc) -55°C ~ 175°C (TJ) Through Hole
IMZA65R057M1HXKSA1

IMZA65R057M1HXKSA1

SILICON CARBIDE MOSFET, PG-TO247

Infineon Technologies
3,723 -

RFQ

IMZA65R057M1HXKSA1

Datenblatt

Tube CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 650 V 35A (Tc) 18V 74mOhm @ 16.7A, 18V 5.7V @ 5mA 28 nC @ 18 V +20V, -2V 930 pF @ 400 V - 133W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF7207TR

IRF7207TR

MOSFET P-CH 20V 5.4A 8SO

Infineon Technologies
2,387 -

RFQ

IRF7207TR

Datenblatt

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 5.4A (Tc) 2.7V, 4.5V 60mOhm @ 5.4A, 4.5V 700mV @ 250µA (Min) 22 nC @ 4.5 V ±12V 780 pF @ 15 V - 2.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF7322D1

IRF7322D1

MOSFET P-CH 20V 5.3A 8SO

Infineon Technologies
2,875 -

RFQ

IRF7322D1

Datenblatt

Tube FETKY™ Obsolete P-Channel MOSFET (Metal Oxide) 20 V 5.3A (Ta) 2.7V, 4.5V 62mOhm @ 2.9A, 4.5V 700mV @ 250µA (Min) 29 nC @ 4.5 V ±12V 780 pF @ 15 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7322D1TR

IRF7322D1TR

MOSFET P-CH 20V 5.3A 8SO

Infineon Technologies
3,852 -

RFQ

IRF7322D1TR

Datenblatt

Tape & Reel (TR) FETKY™ Obsolete P-Channel MOSFET (Metal Oxide) 20 V 5.3A (Ta) 2.7V, 4.5V 62mOhm @ 2.9A, 4.5V 700mV @ 250µA (Min) 29 nC @ 4.5 V ±12V 780 pF @ 15 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7324D1TR

IRF7324D1TR

MOSFET P-CH 20V 2.2A 8SO

Infineon Technologies
2,635 -

RFQ

IRF7324D1TR

Datenblatt

Tape & Reel (TR) FETKY™ Obsolete P-Channel MOSFET (Metal Oxide) 20 V 2.2A (Ta) 2.7V, 4.5V 270mOhm @ 1.2A, 4.5V 700mV @ 250µA (Min) 7.8 nC @ 4.5 V ±12V 260 pF @ 15 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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1500+
1500+ Täglicher Durchschnitts-RFQ
20,000.000
20,000.000 Standardprodukteinheit
1800+
1800+ Weltweite Hersteller
15,000+
15,000+ Lagerbestand
Fudong Communication (shenzhen) Group Co., Ltd.

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