Transistoren – Bipolar (BJT) – Einzeltransistoren, vorgespannt

Foto: Hersteller-Teilenummer Verfügbarkeit Preis Menge Datenblatt Packaging Series ProductStatus TransistorType Current-Collector(Ic)(Max) Voltage-CollectorEmitterBreakdown(Max) Resistor-Base(R1) Resistor-EmitterBase(R2) DCCurrentGain(hFE)(Min)@IcVce VceSaturation(Max)@IbIc Current-CollectorCutoff(Max) Frequency-Transition Power-Max MountingType
PDTA123EU,115

PDTA123EU,115

NOW NEXPERIA PDTA123EU - SMALL S

NXP Semiconductors
3,244 -

RFQ

PDTA123EU,115

Datenblatt

Bulk - Active PNP - Pre-Biased 100 mA 50 V 2.2 kOhms 2.2 kOhms 30 @ 20mA, 5V 150mV @ 500µA, 10mA 1µA - 200 mW Surface Mount
PDTC124TU,115

PDTC124TU,115

NOW NEXPERIA PDTC124TU - SMALL S

NXP Semiconductors
3,722 -

RFQ

PDTC124TU,115

Datenblatt

Bulk - Active NPN - Pre-Biased 100 mA 50 V 22 kOhms - 100 @ 1mA, 5V 150mV @ 500µA, 10mA 1µA - 200 mW Surface Mount
PDTA123YM,315

PDTA123YM,315

NOW NEXPERIA PDTA123YM - SMALL S

NXP Semiconductors
3,216 -

RFQ

PDTA123YM,315

Datenblatt

Bulk - Active PNP - Pre-Biased 100 mA 50 V 2.2 kOhms 10 kOhms 35 @ 5mA, 5V 150mV @ 500µA, 10mA 1µA - 250 mW Surface Mount
PDTC124XM,315

PDTC124XM,315

NOW NEXPERIA PDTC124XM - SMALL S

NXP Semiconductors
3,542 -

RFQ

PDTC124XM,315

Datenblatt

Bulk - Active NPN - Pre-Biased 100 mA 50 V 22 kOhms 47 kOhms 80 @ 5mA, 5V 150mV @ 500µA, 10mA 1µA - 250 mW Surface Mount
PDTA123EU,115

PDTA123EU,115

NOW NEXPERIA PDTA123EU - SMALL S

NXP Semiconductors
2,697 -

RFQ

PDTA123EU,115

Datenblatt

Bulk - Active PNP - Pre-Biased 100 mA 50 V 2.2 kOhms 2.2 kOhms 30 @ 20mA, 5V 150mV @ 500µA, 10mA 1µA - 200 mW Surface Mount
Total 25 Record«Prev12Next»
1500+
1500+ Täglicher Durchschnitts-RFQ
20,000.000
20,000.000 Standardprodukteinheit
1800+
1800+ Weltweite Hersteller
15,000+
15,000+ Lagerbestand
Fudong Communication (shenzhen) Group Co., Ltd.

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