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Dioden – Gleichrichter – Einzeldioden
| Foto: | Hersteller-Teilenummer | Verfügbarkeit | Preis | Menge | Datenblatt | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FR301BULKDIODE GEN PURP 50V 3A DO201AD EIC SEMICONDUCTOR INC. |
7,000 | - |
RFQ |
Datenblatt |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 150 ns | 10 µA @ 50 V | 50 V | 3A | -65°C ~ 150°C | 1.3 V @ 3 A | |
|
|
FR305BULKDIODE GEN PURP 600V 3A DO201AD EIC SEMICONDUCTOR INC. |
7,000 | - |
RFQ |
Datenblatt |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 250 ns | 10 µA @ 600 V | 600 V | 3A | -65°C ~ 150°C | 1.3 V @ 3 A | |
|
|
FR303BULKDIODE GEN PURP 200V 3A DO201AD EIC SEMICONDUCTOR INC. |
5,000 | - |
RFQ |
Datenblatt |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 150 ns | 10 µA @ 200 V | 200 V | 3A | -65°C ~ 150°C | 1.3 V @ 3 A | |
|
BYD13MBULKDIODE AVALANCHE 1000V 1.4A DO41 EIC SEMICONDUCTOR INC. |
5,000 | - |
RFQ |
Datenblatt |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | - | 1 µA @ 1000 V | 1000 V | 1.4A | 175°C | 1.05 V @ 1 A | |
|
|
BYD13GBULKDIODE AVALANCHE 400V 1.4A DO41 EIC SEMICONDUCTOR INC. |
5,000 | - |
RFQ |
Datenblatt |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | - | 1 µA @ 400 V | 400 V | 1.4A | 175°C | 1.05 V @ 1 A | |
|
|
FR306BULKDIODE GEN PURP 800V 3A DO201AD EIC SEMICONDUCTOR INC. |
5,000 | - |
RFQ |
Datenblatt |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 500 ns | 10 µA @ 800 V | 800 V | 3A | -65°C ~ 150°C | 1.3 V @ 3 A | |
|
|
BYD13DBULKDIODE AVALANCHE 200V 1.4A DO41 EIC SEMICONDUCTOR INC. |
5,000 | - |
RFQ |
Datenblatt |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | - | 1 µA @ 200 V | 200 V | 1.4A | 175°C | 1.05 V @ 1 A | |
|
|
BYD33GBULKDIODE AVALANCHE 400V 1.3A DO41 EIC SEMICONDUCTOR INC. |
5,000 | - |
RFQ |
Datenblatt |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 250 ns | 1 µA @ 400 V | 400 V | 1.3A | -65°C ~ 175°C | 1.3 V @ 1 A | |
|
|
HER506T/RDIODE GEN PURP 600V 5A DO201AD EIC SEMICONDUCTOR INC. |
15,000 | - |
RFQ |
Datenblatt |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 75 ns | 10 µA @ 600 V | 600 V | 5A | -65°C ~ 150°C | 1.7 V @ 5 A | |
|
|
HER102BULKDIODE GEN PURP 100V 1A DO41 EIC SEMICONDUCTOR INC. |
5,000 | - |
RFQ |
Datenblatt |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 1A | -65°C ~ 150°C | 1.1 V @ 1 A | |
|
|
BYD13JBULKDIODE AVALANCHE 600V 1.4A DO41 EIC SEMICONDUCTOR INC. |
5,000 | - |
RFQ |
Datenblatt |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | - | 1 µA @ 600 V | 600 V | 1.4A | 175°C | 1.05 V @ 1 A | |
|
|
HER306BULKDIODE GEN PURP 600V 3A DO201AD EIC SEMICONDUCTOR INC. |
2,480 | - |
RFQ |
Datenblatt |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 75 ns | 10 µA @ 600 V | 600 V | 3A | -65°C ~ 150°C | 1.7 V @ 3 A | |
|
|
BYD33MBULKDIODE AVALANCHE 1000V 1.3A DO41 EIC SEMICONDUCTOR INC. |
5,000 | - |
RFQ |
Datenblatt |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 300 ns | 1 µA @ 1000 V | 1000 V | 1.3A | -65°C ~ 175°C | 1.3 V @ 1 A | |
|
|
BYG20JSF 1.5A, CASE TYPE: SMA-L EIC SEMICONDUCTOR INC. |
5,000 | - |
RFQ |
Datenblatt |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 75 ns | 1 µA @ 600 V | 600 V | 1.5A | -55°C ~ 150°C | 1.4 V @ 1.5 A | |
|
|
AR2502DIODE GEN PURP 200V 25A MICRODE EIC SEMICONDUCTOR INC. |
1,500 | - |
RFQ |
Datenblatt |
Bag | Automotive | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 5 µA @ 200 V | 200 V | 25A | -65°C ~ 175°C | 1 V @ 25 A |
|
|
1N5818BULKDIODE SCHOTTKY 30V 1A DO41 EIC SEMICONDUCTOR INC. |
4,000 | - |
RFQ |
Datenblatt |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 110pF @ 4V, 1MHz | - | 1 mA @ 30 V | 30 V | 1A | -65°C ~ 125°C | 550 mV @ 1 A | |
|
|
1N5819BULKDIODE SCHOTTKY 40V 1A DO41 EIC SEMICONDUCTOR INC. |
3,000 | - |
RFQ |
Datenblatt |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 110pF @ 4V, 1MHz | - | 1 mA @ 40 V | 40 V | 1A | -65°C ~ 125°C | 600 mV @ 1 A | |
|
|
FR304BULKDIODE GEN PURP 400V 3A DO201AD EIC SEMICONDUCTOR INC. |
2,500 | - |
RFQ |
Datenblatt |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 150 ns | 10 µA @ 400 V | 400 V | 3A | -65°C ~ 150°C | 1.3 V @ 3 A | |
|
|
RGP02-20E-BULKFAST RECOVERY HIGH VOLTAGE; CASE EIC SEMICONDUCTOR INC. |
10,000 | - |
RFQ |
Datenblatt |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 5pF @ 4V, 1MHz | 300 ns | 5 µA @ 2000 V | 2000 V | 500mA | -65°C ~ 150°C | 1.8 V @ 100 mA | |
|
|
BYD13KBULKDIODE AVALANCHE 800V 1.4A DO41 EIC SEMICONDUCTOR INC. |
2,000 | - |
RFQ |
Datenblatt |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | - | 1 µA @ 800 V | 800 V | 1.4A | 175°C | 1.05 V @ 1 A |
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