Dioden – Brückengleichrichter

Foto: Hersteller-Teilenummer Verfügbarkeit Preis Menge Datenblatt Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
KBU603G

KBU603G

DIODE BRIDGE 6A 200V KBU

Taiwan Semiconductor Corporation
2,097 -

RFQ

Tray - Active Single Phase Standard 200 V 6 A 1.1 V @ 6 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU604G

KBU604G

BRIDGE RECT 1PHASE 400V 6A KBU

Taiwan Semiconductor Corporation
2,084 -

RFQ

KBU604G

Datenblatt

Tray - Active Single Phase Standard 400 V 6 A 1.1 V @ 6 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU605G

KBU605G

BRIDGE RECT 1PHASE 600V 6A KBU

Taiwan Semiconductor Corporation
3,927 -

RFQ

KBU605G

Datenblatt

Tray - Active Single Phase Standard 600 V 6 A 1.1 V @ 6 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU606G

KBU606G

BRIDGE RECT 1PHASE 800V 6A KBU

Taiwan Semiconductor Corporation
3,381 -

RFQ

KBU606G

Datenblatt

Tray - Active Single Phase Standard 800 V 6 A 1.1 V @ 6 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU404G

KBU404G

BRIDGE RECT 1PHASE 400V 4A KBU

Taiwan Semiconductor Corporation
2,008 -

RFQ

KBU404G

Datenblatt

Tray - Active Single Phase Standard 400 V 4 A 1.1 V @ 4 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU405G

KBU405G

BRIDGE RECT 1PHASE 600V 4A KBU

Taiwan Semiconductor Corporation
3,611 -

RFQ

KBU405G

Datenblatt

Tray - Active Single Phase Standard 600 V 4 A 1.1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU406G

KBU406G

BRIDGE RECT 1PHASE 800V 4A KBU

Taiwan Semiconductor Corporation
2,033 -

RFQ

KBU406G

Datenblatt

Tray - Active Single Phase Standard 800 V 4 A 1.1 V @ 4 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU407G

KBU407G

BRIDGE RECT 1PHASE 1KV 4A KBU

Taiwan Semiconductor Corporation
3,332 -

RFQ

KBU407G

Datenblatt

Tray - Active Single Phase Standard 1 kV 4 A 1.1 V @ 4 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
TS50P05G

TS50P05G

BRIDGE RECT 1P 600V 50A TS-6P

Taiwan Semiconductor Corporation
2,800 -

RFQ

TS50P05G

Datenblatt

Tube - Active Single Phase Standard 600 V 50 A 1.1 V @ 25 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
TS50P06G

TS50P06G

BRIDGE RECT 1P 800V 50A TS-6P

Taiwan Semiconductor Corporation
2,323 -

RFQ

TS50P06G

Datenblatt

Tube - Active Single Phase Standard 800 V 50 A 1.1 V @ 25 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
KBU804G

KBU804G

BRIDGE RECT 1PHASE 400V 8A KBU

Taiwan Semiconductor Corporation
3,788 -

RFQ

KBU804G

Datenblatt

Tray - Active Single Phase Standard 400 V 8 A 1.1 V @ 8 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU805G

KBU805G

BRIDGE RECT 1PHASE 600V 8A KBU

Taiwan Semiconductor Corporation
2,503 -

RFQ

KBU805G

Datenblatt

Tray - Active Single Phase Standard 600 V 8 A 1.1 V @ 8 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU806G

KBU806G

BRIDGE RECT 1PHASE 800V 8A KBU

Taiwan Semiconductor Corporation
3,151 -

RFQ

KBU806G

Datenblatt

Tray - Active Single Phase Standard 800 V 8 A 1.1 V @ 8 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU1003G

KBU1003G

DIODE BRIDGE 10A 200V KBU

Taiwan Semiconductor Corporation
2,246 -

RFQ

Tray - Active Single Phase Standard 200 V 10 A 1.1 V @ 10 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU1004G

KBU1004G

BRIDGE RECT 1PHASE 400V 10A KBU

Taiwan Semiconductor Corporation
2,831 -

RFQ

KBU1004G

Datenblatt

Tray - Active Single Phase Standard 400 V 10 A 1.1 V @ 10 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU1006G

KBU1006G

BRIDGE RECT 1PHASE 800V 10A KBU

Taiwan Semiconductor Corporation
2,708 -

RFQ

KBU1006G

Datenblatt

Tray - Active Single Phase Standard 800 V 10 A 1.1 V @ 10 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
TS50P05GH

TS50P05GH

BRIDGE RECT 1P 600V 50A TS-6P

Taiwan Semiconductor Corporation
3,016 -

RFQ

TS50P05GH

Datenblatt

Tube Automotive, AEC-Q101 Active Single Phase Standard 600 V 50 A 1.1 V @ 25 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
TS50P06GH

TS50P06GH

BRIDGE RECT 1P 800V 50A TS-6P

Taiwan Semiconductor Corporation
3,354 -

RFQ

TS50P06GH

Datenblatt

Tube Automotive, AEC-Q101 Active Single Phase Standard 800 V 50 A 1.1 V @ 25 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
TS50P07GH

TS50P07GH

BRIDGE RECT 1PHASE 1KV 50A TS-6P

Taiwan Semiconductor Corporation
3,720 -

RFQ

TS50P07GH

Datenblatt

Tube Automotive, AEC-Q101 Active Single Phase Standard 1 kV 50 A 1.1 V @ 25 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
KBU1007G

KBU1007G

BRIDGE RECT 1PHASE 1KV 10A KBU

Taiwan Semiconductor Corporation
2,995 -

RFQ

KBU1007G

Datenblatt

Tray - Active Single Phase Standard 1 kV 10 A 1.1 V @ 10 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
Total 1002 Record«Prev1... 1011121314151617...51Next»
1500+
1500+ Täglicher Durchschnitts-RFQ
20,000.000
20,000.000 Standardprodukteinheit
1800+
1800+ Weltweite Hersteller
15,000+
15,000+ Lagerbestand
Fudong Communication (shenzhen) Group Co., Ltd.

Startseite

Fudong Communication (shenzhen) Group Co., Ltd.

Produkt

Fudong Communication (shenzhen) Group Co., Ltd.

Telefon

Fudong Communication (shenzhen) Group Co., Ltd.

Benutzer