Transistoren – IGBTs – Einzeltransistoren

Foto: Hersteller-Teilenummer Verfügbarkeit Preis Menge Datenblatt Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
RJP60D0DPK-01#T0

RJP60D0DPK-01#T0

RJH60D0 - INSULATED GATE BIPOLAR

Renesas
3,565 -

RFQ

Bulk - Obsolete - 600 V 45 A 90 A 2.2V @ 15V, 22A 140 W - Standard 45 nC 35ns/90ns 300V, 22A, 5Ohm, 15V - 150°C (TJ) Through Hole
RJH1BF7RDPQ-80#T2

RJH1BF7RDPQ-80#T2

RJH1BF7 - INSULATED GATE BIPOLAR

Renesas
2,522 -

RFQ

Bulk - Obsolete - 1100 V 60 A 100 A 2.35V @ 15V, 60A 250 W - Standard - - - - 150°C (TJ) Through Hole
RJH60D1DPP-E0#T2

RJH60D1DPP-E0#T2

RJH60D1 - INSULATED GATE BIPOLAR

Renesas
3,101 -

RFQ

Bulk - Obsolete Trench 600 V 20 A - 2.5V @ 15V, 10A 30 W 100µJ (on), 130µJ (off) Standard 13 nC 30ns/42ns 300V, 10A, 5Ohm, 15V 70 ns 150°C (TJ) Through Hole
RJH1DF7RDPQ-80#T2

RJH1DF7RDPQ-80#T2

RJH1DF7 - INSULATED GATE BIPOLAR

Renesas
400 -

RFQ

Bulk - Obsolete - 1350 V 60 A - 2.55V @ 15V, 35A 250 W - Standard - 58ns/144ns 600V, 35A, 5Ohm, 15V - 150°C (TJ) Through Hole
1500+
1500+ Täglicher Durchschnitts-RFQ
20,000.000
20,000.000 Standardprodukteinheit
1800+
1800+ Weltweite Hersteller
15,000+
15,000+ Lagerbestand
Fudong Communication (shenzhen) Group Co., Ltd.

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Fudong Communication (shenzhen) Group Co., Ltd.

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Fudong Communication (shenzhen) Group Co., Ltd.

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