Transistoren – FETs, MOSFETs – Einzeltransistoren

Foto: Hersteller-Teilenummer Verfügbarkeit Preis Menge Datenblatt Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
HTNFET-D

HTNFET-D

MOSFET N-CH 55V 8CDIP

Honeywell Aerospace
3,390 -

RFQ

HTNFET-D

Datenblatt

Bulk HTMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V - 5V 400mOhm @ 100mA, 5V 2.4V @ 100µA 4.3 nC @ 5 V 10V 290 pF @ 28 V - 50W (Tj) -55°C ~ 225°C (TJ) Through Hole
HTNFET-DC

HTNFET-DC

MOSFET N-CH 55V 8-DIP

Honeywell Aerospace
3,210 -

RFQ

HTNFET-DC

Datenblatt

Bulk HTMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V - 5V 400mOhm @ 100mA, 5V 2.4V @ 100µA 4.3 nC @ 5 V 10V 290 pF @ 28 V - 50W (Tj) - Through Hole
HTNFET-TC

HTNFET-TC

MOSFET N-CH 55V 4-PIN

Honeywell Aerospace
3,327 -

RFQ

HTNFET-TC

Datenblatt

Bulk HTMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V - 5V 400mOhm @ 100mA, 5V 2.4V @ 100µA 4.3 nC @ 5 V 10V 290 pF @ 28 V - 50W (Tj) - Through Hole
HTNFET-T

HTNFET-T

MOSFET N-CH 55V 4POWER TAB

Honeywell Aerospace
3,587 -

RFQ

HTNFET-T

Datenblatt

Bulk HTMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V - 5V 400mOhm @ 100mA, 5V 2.4V @ 100µA 4.3 nC @ 5 V 10V 290 pF @ 28 V - 50W (Tj) -55°C ~ 225°C (TJ) Through Hole
1500+
1500+ Täglicher Durchschnitts-RFQ
20,000.000
20,000.000 Standardprodukteinheit
1800+
1800+ Weltweite Hersteller
15,000+
15,000+ Lagerbestand
Fudong Communication (shenzhen) Group Co., Ltd.

Startseite

Fudong Communication (shenzhen) Group Co., Ltd.

Produkt

Fudong Communication (shenzhen) Group Co., Ltd.

Telefon

Fudong Communication (shenzhen) Group Co., Ltd.

Benutzer