Transistoren – FETs, MOSFETs – Einzeltransistoren

Foto: Hersteller-Teilenummer Verfügbarkeit Preis Menge Datenblatt Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
PMWD18UN118

PMWD18UN118

SMALL SIGNAL N-CHANNEL MOSFET

Philips
5,000 -

RFQ

PMWD18UN118

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
BUK755R4-100E127

BUK755R4-100E127

N-CHANNEL POWER MOSFET

Philips
3,644 -

RFQ

BUK755R4-100E127

Datenblatt

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 5.2mOhm @ 25A, 10V 4V @ 1mA 180 nC @ 10 V ±20V 11810 pF @ 25 V - 349W (Tc) -55°C ~ 175°C (TJ) Through Hole
1500+
1500+ Täglicher Durchschnitts-RFQ
20,000.000
20,000.000 Standardprodukteinheit
1800+
1800+ Weltweite Hersteller
15,000+
15,000+ Lagerbestand
Fudong Communication (shenzhen) Group Co., Ltd.

Startseite

Fudong Communication (shenzhen) Group Co., Ltd.

Produkt

Fudong Communication (shenzhen) Group Co., Ltd.

Telefon

Fudong Communication (shenzhen) Group Co., Ltd.

Benutzer