Transistoren – FETs, MOSFETs – Einzeltransistoren

Foto: Hersteller-Teilenummer Verfügbarkeit Preis Menge Datenblatt Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
3LN01SS-TL-E

3LN01SS-TL-E

N-CHANNEL SILICON MOSFET

Catalyst Semiconductor Inc.
3,080 -

RFQ

3LN01SS-TL-E

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 150mA (Ta) 1.5V, 4V 3.7Ohm @ 80mA, 4V - 1.58 nC @ 10 V ±10V 7000 pF @ 10 V - 150mW (Ta) 150°C (TJ) Surface Mount
1500+
1500+ Täglicher Durchschnitts-RFQ
20,000.000
20,000.000 Standardprodukteinheit
1800+
1800+ Weltweite Hersteller
15,000+
15,000+ Lagerbestand
Fudong Communication (shenzhen) Group Co., Ltd.

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