Transistoren – FETs, MOSFETs – Einzeltransistoren

Foto: Hersteller-Teilenummer Verfügbarkeit Preis Menge Datenblatt Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
ND2012L-TR1

ND2012L-TR1

SMALL SIGNAL N-CHANNEL MOSFET

Siliconix
2,765 -

RFQ

ND2012L-TR1

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
ND2012L

ND2012L

SMALL SIGNAL FIELD-EFFECT TRANSI

Siliconix
2,858 -

RFQ

ND2012L

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
VN1210M-TA

VN1210M-TA

N-CHANNEL POWER MOSFET

Siliconix
3,061 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
VN2406M

VN2406M

SMALL SIGNAL N-CHANNEL MOSFET

Siliconix
3,202 -

RFQ

VN2406M

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
VN10KC-T1

VN10KC-T1

SMALL SIGNAL N-CHANNEL MOSFET

Siliconix
73,431 -

RFQ

VN10KC-T1

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
1500+
1500+ Täglicher Durchschnitts-RFQ
20,000.000
20,000.000 Standardprodukteinheit
1800+
1800+ Weltweite Hersteller
15,000+
15,000+ Lagerbestand
Fudong Communication (shenzhen) Group Co., Ltd.

Startseite

Fudong Communication (shenzhen) Group Co., Ltd.

Produkt

Fudong Communication (shenzhen) Group Co., Ltd.

Telefon

Fudong Communication (shenzhen) Group Co., Ltd.

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