Transistoren – FETs, MOSFETs – Einzeltransistoren

Foto: Hersteller-Teilenummer Verfügbarkeit Preis Menge Datenblatt Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
HCT7000MTXV

HCT7000MTXV

MOSFET N-CH 60V 200MA 3SMD

TT Electronics/Optek Technology
3,997 -

RFQ

HCT7000MTXV

Datenblatt

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 200mA (Ta) 10V 5Ohm @ 500mA, 10V 3V @ 1mA - ±40V 60 pF @ 25 V - 300mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
HCT7000M

HCT7000M

MOSFET N-CH 60V 200MA 3SMD

TT Electronics/Optek Technology
2,026 -

RFQ

HCT7000M

Datenblatt

Bulk,Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 200mA (Ta) 10V 5Ohm @ 500mA, 10V 3V @ 1mA - ±40V 60 pF @ 25 V - 300mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
HCT7000MTX

HCT7000MTX

MOSFET N-CH 60V 200MA 3SMD

TT Electronics/Optek Technology
2,971 -

RFQ

HCT7000MTX

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 200mA (Ta) 10V 5Ohm @ 500mA, 10V 3V @ 1mA - ±40V 60 pF @ 25 V - 300mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Täglicher Durchschnitts-RFQ
20,000.000
20,000.000 Standardprodukteinheit
1800+
1800+ Weltweite Hersteller
15,000+
15,000+ Lagerbestand
Fudong Communication (shenzhen) Group Co., Ltd.

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Fudong Communication (shenzhen) Group Co., Ltd.

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Fudong Communication (shenzhen) Group Co., Ltd.

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Fudong Communication (shenzhen) Group Co., Ltd.

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