Transistoren – FETs, MOSFETs – Arrays

Foto: Hersteller-Teilenummer Verfügbarkeit Preis Menge Datenblatt Packaging Series ProductStatus FETType FETFeature DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs InputCapacitance(Ciss)(Max)@Vds Power-Max OperatingTemperature MountingType
ALD1106SBL

ALD1106SBL

MOSFET 4N-CH 10.6V 14SOIC

Advanced Linear Devices Inc.
200 -

RFQ

ALD1106SBL

Datenblatt

Tube - Active 4 N-Channel, Matched Pair Standard 10.6V - 500Ohm @ 5V 1V @ 1µA - 3pF @ 5V 500mW 0°C ~ 70°C (TJ) Surface Mount
ALD1116SAL

ALD1116SAL

MOSFET 2N-CH 10.6V 8SOIC

Advanced Linear Devices Inc.
3,801 -

RFQ

ALD1116SAL

Datenblatt

Tube - Active 2 N-Channel (Dual) Matched Pair Standard 10.6V - 500Ohm @ 5V 1V @ 1µA - 3pF @ 5V 500mW 0°C ~ 70°C (TJ) Surface Mount
ALD1117SAL

ALD1117SAL

MOSFET 2P-CH 10.6V 8SOIC

Advanced Linear Devices Inc.
155 -

RFQ

ALD1117SAL

Datenblatt

Tube - Active 2 P-Channel (Dual) Matched Pair Standard 10.6V - 1800Ohm @ 5V 1V @ 1µA - 3pF @ 5V 500mW 0°C ~ 70°C (TJ) Surface Mount
ALD111933SAL

ALD111933SAL

MOSFET 2N-CH 10.6V 8SOIC

Advanced Linear Devices Inc.
300 -

RFQ

ALD111933SAL

Datenblatt

Tube EPAD® Active 2 N-Channel (Dual) Matched Pair Standard 10.6V - 500Ohm @ 5.9V 3.35V @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) Surface Mount
ALD1116PAL

ALD1116PAL

MOSFET 2N-CH 10.6V 8DIP

Advanced Linear Devices Inc.
133 -

RFQ

ALD1116PAL

Datenblatt

Tube - Active 2 N-Channel (Dual) Matched Pair Standard 10.6V - 500Ohm @ 5V 1V @ 1µA - 3pF @ 5V 500mW 0°C ~ 70°C (TJ) Through Hole
ALD1107PBL

ALD1107PBL

MOSFET 4P-CH 10.6V 14DIP

Advanced Linear Devices Inc.
946 -

RFQ

ALD1107PBL

Datenblatt

Tube - Active 4 P-Channel, Matched Pair Standard 10.6V - 1800Ohm @ 5V 1V @ 1µA - 3pF @ 5V 500mW 0°C ~ 70°C (TJ) Through Hole
ALD1106PBL

ALD1106PBL

MOSFET 4N-CH 10.6V 14DIP

Advanced Linear Devices Inc.
701 -

RFQ

ALD1106PBL

Datenblatt

Tube - Active 4 N-Channel, Matched Pair Standard 10.6V - 500Ohm @ 5V 1V @ 1µA - 3pF @ 5V 500mW 0°C ~ 70°C (TJ) Through Hole
ALD1105PBL

ALD1105PBL

MOSFET 2N/2P-CH 10.6V 14DIP

Advanced Linear Devices Inc.
169 -

RFQ

ALD1105PBL

Datenblatt

Tube - Active 2 N and 2 P-Channel Matched Pair Standard 10.6V - 500Ohm @ 5V 1V @ 1µA - 3pF @ 5V 500mW 0°C ~ 70°C (TJ) Through Hole
ALD1103PBL

ALD1103PBL

MOSFET 2N/2P-CH 10.6V 14DIP

Advanced Linear Devices Inc.
2,587 -

RFQ

ALD1103PBL

Datenblatt

Tube - Active 2 N and 2 P-Channel Matched Pair Standard 10.6V 40mA, 16mA 75Ohm @ 5V 1V @ 10µA - 10pF @ 5V 500mW 0°C ~ 70°C (TJ) Through Hole
ALD110900SAL

ALD110900SAL

MOSFET 2N-CH 10.6V 8SOIC

Advanced Linear Devices Inc.
822 -

RFQ

ALD110900SAL

Datenblatt

Tube EPAD®, Zero Threshold™ Active 2 N-Channel (Dual) Matched Pair Standard 10.6V - 500Ohm @ 4V 20mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) Surface Mount
ALD114913SAL

ALD114913SAL

MOSFET 2N-CH 10.6V 8SOIC

Advanced Linear Devices Inc.
249 -

RFQ

ALD114913SAL

Datenblatt

Tube EPAD® Active 2 N-Channel (Dual) Matched Pair Depletion Mode 10.6V 12mA, 3mA 500Ohm @ 2.7V 1.26V @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) Surface Mount
ALD1107SBL

ALD1107SBL

MOSFET 4P-CH 10.6V 14SOIC

Advanced Linear Devices Inc.
114 -

RFQ

ALD1107SBL

Datenblatt

Tube - Active 4 P-Channel, Matched Pair Standard 10.6V - 1800Ohm @ 5V 1V @ 1µA - 3pF @ 5V 500mW 0°C ~ 70°C (TJ) Surface Mount
ALD1101PAL

ALD1101PAL

MOSFET 2N-CH 10.6V 8DIP

Advanced Linear Devices Inc.
179 -

RFQ

ALD1101PAL

Datenblatt

Tube - Active 2 N-Channel (Dual) Matched Pair Standard 10.6V - 75Ohm @ 5V 1V @ 10µA - - 500mW 0°C ~ 70°C (TJ) Through Hole
ALD110800ASCL

ALD110800ASCL

MOSFET 4N-CH 10.6V 16SOIC

Advanced Linear Devices Inc.
826 -

RFQ

ALD110800ASCL

Datenblatt

Tube EPAD®, Zero Threshold™ Active 4 N-Channel, Matched Pair Standard 10.6V - 500Ohm @ 4V 10mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) Surface Mount
ALD114835SCL

ALD114835SCL

MOSFET 4N-CH 10.6V 16SOIC

Advanced Linear Devices Inc.
498 -

RFQ

ALD114835SCL

Datenblatt

Tube EPAD® Active 4 N-Channel, Matched Pair Depletion Mode 10.6V 12mA, 3mA 540Ohm @ 0V 3.45V @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) Surface Mount
ALD1115PAL

ALD1115PAL

MOSFET N/P-CH 10.6V 8DIP

Advanced Linear Devices Inc.
2,006 -

RFQ

ALD1115PAL

Datenblatt

Tube - Active N and P-Channel Complementary Standard 10.6V - 1800Ohm @ 5V 1V @ 1µA - 3pF @ 5V 500mW 0°C ~ 70°C (TJ) Through Hole
ALD110900APAL

ALD110900APAL

MOSFET 2N-CH 10.6V 8DIP

Advanced Linear Devices Inc.
3,253 -

RFQ

ALD110900APAL

Datenblatt

Tube EPAD®, Zero Threshold™ Active 2 N-Channel (Dual) Matched Pair Standard 10.6V - 500Ohm @ 4V 10mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) Through Hole
ALD110800APCL

ALD110800APCL

MOSFET 4N-CH 10.6V 16DIP

Advanced Linear Devices Inc.
2,345 -

RFQ

ALD110800APCL

Datenblatt

Tube EPAD®, Zero Threshold™ Active 4 N-Channel, Matched Pair Standard 10.6V - 500Ohm @ 4V 10mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) Through Hole
ALD1117PAL

ALD1117PAL

MOSFET 2P-CH 10.6V 8DIP

Advanced Linear Devices Inc.
3,638 -

RFQ

ALD1117PAL

Datenblatt

Tube - Active 2 P-Channel (Dual) Matched Pair Standard 10.6V - 1800Ohm @ 5V 1V @ 1µA - 3pF @ 5V 500mW 0°C ~ 70°C (TJ) Through Hole
ALD1105SBL

ALD1105SBL

MOSFET 2N/2P-CH 10.6V 14SOIC

Advanced Linear Devices Inc.
3,195 -

RFQ

ALD1105SBL

Datenblatt

Tube - Active 2 N and 2 P-Channel Matched Pair Standard 10.6V - 500Ohm @ 5V 1V @ 1µA - 3pF @ 5V 500mW 0°C ~ 70°C (TJ) Surface Mount
Total 125 Record«Prev1234...7Next»
1500+
1500+ Täglicher Durchschnitts-RFQ
20,000.000
20,000.000 Standardprodukteinheit
1800+
1800+ Weltweite Hersteller
15,000+
15,000+ Lagerbestand
Fudong Communication (shenzhen) Group Co., Ltd.

Startseite

Fudong Communication (shenzhen) Group Co., Ltd.

Produkt

Fudong Communication (shenzhen) Group Co., Ltd.

Telefon

Fudong Communication (shenzhen) Group Co., Ltd.

Benutzer