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Transistoren – Bipolar (BJT) – Arrays

Foto: Hersteller-Teilenummer Verfügbarkeit Preis Menge Datenblatt Packaging Series ProductStatus TransistorType Current-Collector(Ic)(Max) Voltage-CollectorEmitterBreakdown(Max) VceSaturation(Max)@IbIc Current-CollectorCutoff(Max) DCCurrentGain(hFE)(Min)@IcVce Power-Max Frequency-Transition OperatingTemperature MountingType

Foto:	Hersteller-Teilenummer	Verfügbarkeit	Preis	Menge	Datenblatt	Packaging	Series	ProductStatus	TransistorType	Current-Collector(Ic)(Max)	Voltage-CollectorEmitterBreakdown(Max)	VceSaturation(Max)@IbIc	Current-CollectorCutoff(Max)	DCCurrentGain(hFE)(Min)@IcVce	Power-Max	Frequency-Transition	OperatingTemperature	MountingType
	NTE2018 IC-8 CHAN CMOS/TTL DR 18-PIN DIP NTE Electronics, Inc	3,842	-	RFQ	Datenblatt	Bag	-	Active	8 NPN Darlington	600mA	50V	1.6V @ 350mA, 500A	-	-	1W	-	-20°C ~ 85°C (TA)	Through Hole
	NTE912 IC-3 ISOLATED TRANS. 14-LEAD NTE Electronics, Inc	2,020	-	RFQ	Datenblatt	Bag	-	Active	5 NPN	50mA	24V	230mV @ 1mA, 10mA	500nA	40 @ 1mA, 3V	750mW	550MHz	-55°C ~ 125°C (TA)	Through Hole