Speicher

Foto: Hersteller-Teilenummer Verfügbarkeit Preis Menge Datenblatt Packaging Series ProductStatus MemoryType MemoryFormat Technology MemorySize MemoryInterface ClockFrequency WriteCycleTime-WordPage AccessTime Voltage-Supply OperatingTemperature MountingType
HT6256DC

HT6256DC

IC SRAM 256KBIT PARALLEL 28CDIP

Honeywell Aerospace
3,339 -

RFQ

HT6256DC

Datenblatt

Bulk HTMOS™ Active Volatile SRAM SRAM 256Kb (32K x 8) Parallel 20 MHz 50ns 50 ns 4.5V ~ 5.5V -55°C ~ 225°C (TA) Through Hole
HTEE25608D

HTEE25608D

IC EEPROM 256KBIT PAR 56CPGA

Honeywell Aerospace
2,638 -

RFQ

HTEE25608D

Datenblatt

Tube - Active Non-Volatile EEPROM EEPROM 256Kb (32K x 8) Parallel, SPI 5 MHz 90ms 150 ns 4.75V ~ 5.25V -55°C ~ 225°C (TA) Through Hole
HTEE25608

HTEE25608

IC EEPROM 256KBIT PAR 56CPGA

Honeywell Aerospace
2,205 -

RFQ

HTEE25608

Datenblatt

Bulk - Active Non-Volatile EEPROM EEPROM 256Kb (32K x 8) Parallel, SPI 5 MHz 90ms 150 ns 4.75V ~ 5.25V -55°C ~ 225°C (TA) Through Hole
1500+
1500+ Täglicher Durchschnitts-RFQ
20,000.000
20,000.000 Standardprodukteinheit
1800+
1800+ Weltweite Hersteller
15,000+
15,000+ Lagerbestand
Fudong Communication (shenzhen) Group Co., Ltd.

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Fudong Communication (shenzhen) Group Co., Ltd.

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Fudong Communication (shenzhen) Group Co., Ltd.

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Fudong Communication (shenzhen) Group Co., Ltd.

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